Patents by Inventor Yukio Yamasaki
Yukio Yamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170119995Abstract: A sleep control system in accordance with an embodiment of the present invention includes: a heating section being provided in contact with a human body and heating the human body; and a control section for controlling a heating operation carried out by the heating section, the heating section carrying out heating at a temperature in a range of 36° C. to 41° C. in a period from time for starting heating until a scheduled awakening time, the time for staring heating being in a period of 90 minutes to 150 minutes prior to the scheduled awakening time, and the heating section carrying out no heating at a temperature higher than 33° C. in a period from bedtime until the time for starting heating or in a period after elapse of a given time from the bedtime and until the time for starting heating.Type: ApplicationFiled: June 1, 2015Publication date: May 4, 2017Inventors: Tomohiro KOYANAGI, Yukio YAMASAKI
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Patent number: 8124431Abstract: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: GrantFiled: August 18, 2010Date of Patent: February 28, 2012Assignee: Sharp Kabushiki KaishaInventor: Yukio Yamasaki
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Patent number: 8059691Abstract: A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: GrantFiled: June 28, 2010Date of Patent: November 15, 2011Assignee: Sharp Kabushiki KaishaInventor: Yukio Yamasaki
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Patent number: 8031751Abstract: The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heatType: GrantFiled: September 19, 2008Date of Patent: October 4, 2011Assignee: Sharp Kabushiki KaishaInventors: Yukio Yamasaki, Kei Yamamoto
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Publication number: 20110061240Abstract: A one-piece attachment; comprised of an upper section that is a hollow, tapered structure; top end having a slotted opening; made with the top end having the wider opening, tapering down to the bottom of this structure. The lower section is the fork/spoon head.Type: ApplicationFiled: September 11, 2009Publication date: March 17, 2011Inventors: Randall Katsutoshi Kazama, Keith Yukio Yamasaki, Wallace Katsuichi Kazama
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Publication number: 20100317134Abstract: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: ApplicationFiled: August 18, 2010Publication date: December 16, 2010Inventor: Yukio Yamasaki
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Publication number: 20100290492Abstract: A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: ApplicationFiled: June 28, 2010Publication date: November 18, 2010Inventor: Yukio Yamasaki
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Patent number: 7804878Abstract: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: GrantFiled: March 8, 2007Date of Patent: September 28, 2010Assignee: Sharp Kabushiki KaishaInventor: Yukio Yamasaki
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Patent number: 7724793Abstract: At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.Type: GrantFiled: November 29, 2006Date of Patent: May 25, 2010Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Yukio Yamasaki, Shuichiro Yamamoto
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Publication number: 20090251883Abstract: A light-emitting device including a semiconductor laser element having at least a substrate, a first conductive type clad layer, an active layer, and a second conductive type clad layer in this order; and a phosphor absorbing a laser light emitted from the semiconductor laser element and radiating fluorescence, wherein the semiconductor laser element is a self-oscillation laser element.Type: ApplicationFiled: March 12, 2009Publication date: October 8, 2009Inventors: Yukio Yamasaki, Katsuhiko Kishimoto
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Publication number: 20090080485Abstract: The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heatType: ApplicationFiled: September 19, 2008Publication date: March 26, 2009Inventors: Yukio Yamasaki, Kei Yamamoto
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Publication number: 20090059984Abstract: A nitride-based semiconductor light-emitting device includes at least one n-type nitride-based semiconductor layer, an active layer having a quantum well structure, and at least one p-type nitride-based semiconductor layer successively stacked on a substrate, the active layer including an InGaN well layer and a barrier layer containing at least one of GaN and InGaN and having a light-emission wavelength in a range of 430 nm to 580 nm, the well layer having a thickness in a range of 1.2 nm to 4.0 nm, and the barrier layer being more than 10 times and at most 45 times as thick as the well layer.Type: ApplicationFiled: August 28, 2008Publication date: March 5, 2009Inventors: Masataka Ohta, Yuhzoh Tsuda, Yukio Yamasaki
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Patent number: 7421000Abstract: A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.Type: GrantFiled: February 9, 2007Date of Patent: September 2, 2008Assignee: Sharp Kabushiki KaishaInventors: Mototaka Taneya, Yukio Yamasaki, Shigetoshi Ito
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Patent number: 7372885Abstract: A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.Type: GrantFiled: December 16, 2005Date of Patent: May 13, 2008Assignee: Sharp Kabushiki KaishaInventor: Yukio Yamasaki
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Patent number: 7356059Abstract: A drive current is generated by mixing a pulse signal from a pulse generator and a DC current from a DC current power supply using a T circuit and injected into a nitride semiconductor laser having a horizontal light-confinement ridge structure. The horizontal light-confinement coefficient of the nitride semiconductor laser is between 85% and 99%. The time when the current waveform of the drive current is continuously over the threshold current of the nitride semiconductor laser ranges from 5 nsec to 1,000 nsec.Type: GrantFiled: November 25, 2002Date of Patent: April 8, 2008Assignee: Sharp Kabushiki KaishaInventors: Yukio Yamasaki, Shigetoshi Ito
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Publication number: 20070217462Abstract: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.Type: ApplicationFiled: March 8, 2007Publication date: September 20, 2007Inventor: Yukio Yamasaki
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Publication number: 20070153854Abstract: A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.Type: ApplicationFiled: February 9, 2007Publication date: July 5, 2007Inventors: Mototaka Taneya, Yukio Yamasaki, Shigetoshi Ito
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Publication number: 20070121692Abstract: At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.Type: ApplicationFiled: November 29, 2006Publication date: May 31, 2007Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki Kawakami, Yukio Yamasaki, Shuichiro Yamamoto
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Patent number: 7177336Abstract: A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.Type: GrantFiled: March 26, 2003Date of Patent: February 13, 2007Assignee: Sharp Kabushiki KaishaInventors: Mototaka Taneya, Yukio Yamasaki, Shigetoshi Ito
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Patent number: 7167489Abstract: According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 ?m from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe.Type: GrantFiled: July 18, 2002Date of Patent: January 23, 2007Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Yukio Yamasaki, Tomoki Ono, Shigetoshi Ito, Susumu Omi