Abstract: The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

Abstract: The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide.

Abstract: A semiconductor light-emitting element 100 is formed including a buffer layer 102, a n-type GaN layer 103, a light-emitting layer 104 and a p-type layer 105 laminated in this order on a sapphire substrate and has a light transmitting electrode 106 made of a needle crystal of ITO.

Abstract: In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device includes a light-transparent electrode made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment, and a thermal process is carried out.

Abstract: In a semiconductor light-emitting device 100, a buffer layer 102, a undoped GaN layer 103, a high carrier concentration n+-layer 104, an n-type layer 105, an emission layer 106, a p-type layer 107, and a p-type contact layer 108 are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device 100 comprises a light-transparent electrode 110 made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment and thermal process are carried out.

Abstract: A method for fabricating a plated product including a basecoat layer, a metal plating layer, and a topcoat layer that are formed on a surface of a base is provided. The method includes the step of forming the basecoat layer and the metal plating layer successively on the surface of the base. The step is followed by removing impurities from the surface of the metal plating layer. The topcoat layer is then formed on the surface of the metal plating layer.

Abstract: A plated product has a base layer, a silver plating layer, and a top coat layer. The top coat layer is consisted of an acrylic silicone coating that includes a primary agent and a curing agent. A coating film is formed by causing the primary agent and the curing agent to react while the acrylic silicone coating is applied to the metal plating layer. When the coating film is aged by allowing to stand for 240 hours at a normal temperature and a humidity range of 20% to 70%, the range of the glass transition temperature of the coating film is between 70° C. and 120° C. inclusive. The plated product has superior weather resistance.

Abstract: A method for fabricating a plated product with a basecoat layer, a metal plating layer, and a topcoat layer that are formed on a surface of a base is provided. The method includes the step of forming the basecoat layer and the metal plating layer on the surface of the base. The step is followed by subjecting the metal plating layer to a cold heat treatment or an ultrasonic wave treatment, thus forming a microcrack in the metal plating layer. Afterwards, the topcoat layer is formed on the surface of the metal plating layer.

Abstract: In the silver mirror pre-treating step, a tin[II] chloride solution with tin[II] actually serving as a co-catalyst is used for supporting tin[II] on the surface of the basecoat layer in the co-catalyst-supporting step. In the next washing step, the surface of the basecoat layer is washed with water. In the still next catalyst-supporting step, a palladium chloride solution with palladium[II] actually serving as a catalyst is used for supporting palladium[II] on the surface of the basecoat layer. After that, the resulting laminate is washed in the next washing step and then plated through silver mirror reaction in the still next plate layer-forming step.

Abstract: A method for fabricating a plated product including a basecoat layer, a metal plating layer, and a topcoat layer that are formed on a surface of a base is provided. The method includes the step of forming the basecoat layer and the metal plating layer successively on the surface of the base. The step is followed by removing impurities from the surface of the metal plating layer. The topcoat layer is then formed on the surface of the metal plating layer.

Abstract: A method for fabricating a plated product with a basecoat layer, a metal plating layer, and a topcoat layer that are formed on a surface of a base is provided. The method includes the step of forming the basecoat layer and the metal plating layer on the surface of the base. The step is followed by subjecting the metal plating layer to a cold heat treatment or an ultrasonic wave treatment, thus forming a microcrack in the metal plating layer. Afterwards, the topcoat layer is formed on the surface of the metal plating layer.

Abstract: A flexible lustered product used in automobiles. The flexible lustered product includes a base material made of resin. A base coat layer is formed on at least a portion of a surface of the base material by applying a coating. The base coat layer has a glass transition point that is at least −30° C. and at most 0° C. The base coat layer includes a silane coupling agent having a mercapto group. A metal film layer is applied to at least a portion of a surface of the base coat layer. The metal film layer is anticorrosive and has a thickness that is at least 150 Å and at most 800 Å. The metal film layer is formed by a plurality of metal particles disposed in contact with one another so as to define a grain boundary between adjacent metal particles. A top coat layer is formed on at least a portion of a surface of the metal film layer by applying a coating.

Abstract: A flexible lustered product used in automobiles. The flexible lustered product includes a base material made of resin. A base coat layer is applied to at least a portion of the surface of the base material. The base coat layer has a glass transition point that is at least minus 30° C. and at most 0° C. The base coat layer includes a silane coupling agent having an epoxy group. A metal film layer is applied to at least a portion of the surface of the base coat layer. The metal film layer is anticorrosive and has a thickness that is at least 150 Å and at most 800 Å. The metal film layer is formed by a plurality of metal particles disposed in contact with one another so as to define a grain boundary between adjacent metal particles. A top coat layer is applied to at least a portion of the surface of the metal film layer. The top coat layer includes an ultraviolet ray absorbent and a silane coupling agent having an epoxy group.

Abstract: A flexible metallized product having a base material made of a soft resin material comprising polypropylene mixed with diene or polypropylene mixed with rubber, a base coat layer formed on the surface of the base material, a metal thin film layer formed on the surface of the base coat layer and a top coat layer covering the metal thin film layer. The metal thin film layer is made of a corrosion resistant metal such as chromium. The metal thin film layer has a thickness of at least 150 .ANG. and no greater than 800 .ANG. by means of a vacuum vapor deposition or sputtering. The metal thin film layer is constituted by a plurality of metal particles. The metal particles are disposed such that adjacent metal particles are in contact with one another to form a grain boundary therebetween.