Patents by Inventor Yukitaka Nakano

Yukitaka Nakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide film and method for manufacturing the same
    Patent number: 6475456
    Abstract: There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.
    Type: Grant
    Filed: December 3, 2001
    Date of Patent: November 5, 2002
    Assignee: Hoya Corporation
    Inventors: Yukitaka Nakano, Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara
  • Silicon carbide film and method for manufacturing the same
    Publication number: 20020124793
    Abstract: There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of:
    Type: Application
    Filed: December 3, 2001
    Publication date: September 12, 2002
    Applicant: Hoya Corporation
    Inventors: Yukitaka Nakano, Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara
  • Silicon carbide film and method for manufacturing the same
    Patent number: 6416578
    Abstract: There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: July 9, 2002
    Assignee: Hoya Corporation
    Inventors: Yukitaka Nakano, Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara
  • Silicon carbide film and method for manufacturing the same
    Publication number: 20020035960
    Abstract: There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of:
    Type: Application
    Filed: February 29, 2000
    Publication date: March 28, 2002
    Inventors: Yukitaka Nakano, Hiroyuki Nagasawa, Kuniaki Yagi, Takanitsu Kawahara