Abstract: A metal filling apparatus minimizes the thickness of excess metal formed on an object and fills molten metal into a minute space to have an opening on the object. A table holds a semiconductor wafer, piston has a pressure portion on a side facing the table, and a pressing mechanism engages the piston onto the wafer, and an airtight chamber is formed by the wafer on the table, housing, and piston. A mechanism reduces pressure inside the chamber by exhausting gas, a mechanism supplies molten metal to the chamber, and a mechanism supplies an inert gas into the chamber.

Abstract: The present invention relates to a metal filling apparatus which can minimize the thickness of a layer of excess metal formed on an object to be processed after processing and which is capable of filling a molten metal into a minute space (via, through hole) formed to have an opening on the object to be processed. A metal filling apparatus 1 comprises a holding table H holding a semiconductor wafer, a piston P provided facing the holding table H and having a metallic pressing portion formed on the side facing the holding table H, a pressing mechanism 5 provided to be capable of pressing the piston P onto the semiconductor wafer K held on the holding table H and other components, and an airtight processing chamber 2 is formed by the semiconductor wafer held on the holding table H, the housing C and the piston P.

Abstract: A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separated by an interspace communicating with the gas-supply-head exterior, and a plurality of coplanar facing plates perforated, top-side-to-underside, with gas-discharging through-holes receiving the distal ends of the gas conduits, and with a latticework of gaps surrounding the discharging through-holes and communicating with the interspace; and a gas supply device for supplying ozone gas to the discharging through-holes. The facing plates are of small volume such that even should heat transfer between the plates and the substrate occur, thermal equilibrium between the plates and the substrate is reached in a short time, facilitating substrate temperature management.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 includes: a placement table 20 on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lifter 30 for moving the placement table 20 up and down; and a control unit 35 for controlling the operation of said lifter 30.

Abstract: An ozone processing device includes: a mounting base on which a substrate is mounted; a heating device to heat the substrate on the mounting base; a plurality of plates facing the substrate on the mounting base and equipped with discharge openings on the surface facing the substrate that discharge ozone gas in the direction of the substrate; and a gas supply device supplying ozone gas to the discharge openings of the plates to allow them to discharge gas. The plates are arranged in a co-planar manner with gaps formed between adjacent plates. The plates have a small volume so that even if there is heat transfer between the plates and the substrate, thermal equilibrium is achieved between the plates and the substrate in a short time, thus making temperature management of the substrate easy.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 comprises: a placement table 20 on which the substrate K is placed; a heating means for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lift means 30 for moving the placement table 20 up and down; and a control means 35 for controlling the operation of said lift means 30.