Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

Abstract: A solar cell according to an embodiment includes a p? electrode, an n? electrode, a p? type light-absorbing layer on the p? electrode, and an n? type layer between the p? type light-absorbing layer and the n? electrode. A first region is included in the p? type light-absorbing layer from a surface on the n? type layer side toward the p? electrode. The first region includes n? type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p? type light-absorbing layer [nm]. A concentration of the n? type dopant of the first region is 1.0×1014 [cm?3] or more and 1.0×1019 [cm?3] or less. The concentration of the n? type dopant of the first region and a concentration of hole of the first region satisfy 10?the concentration of the n? type dopant/the concentration of hole?5.0×1026.

Abstract: According to one embodiment, a solar cell includes first and second conductive layers, first and second counter conductive layers, first and second photoelectric conversion layers, first and second compound layers. The first counter conductive layer includes a first conductive region. A direction from the first conductive layer to the first conductive region is along a first direction. The first compound layer includes a first compound region provided between the first photoelectric conversion layer and the first conductive region. A second direction from the first conductive layer to the second conductive layer crosses the first direction. The second counter conductive layer includes a second conductive region electrically connected with the first conductive layer. A direction from the second conductive layer to the second conductive region is along the first direction. A direction from the first conductive region to the second conductive region is along the second direction.

Abstract: A tandem solar cell according to an embodiment includes a top cell string, a bottom cell string, a top cell module, a first string connection, a bottom cell module, and a second string connection. The top cell string is formed by electrically connecting a plurality of top cells. The bottom cell string is formed by electrically connecting a plurality of bottom cells. The bottom cell string is arranged so as to overlap the top cell string in a plan view in a thickness direction of the top cell. The first string connection includes a first extending portion extending to an outside of the top cell module in the plan view. A plurality of bottom cell strings are electrically connected to the bottom cell module. The first extending portion and the second extending portion are arranged apart from each other in the plan view.

Abstract: A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80?a1?2.20, 0.005?b1?0.05, 0?c1?0.20, and 0.60?d1?1.00.

Abstract: A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, an n-type layer on the p-type light-absorbing layer, and an n-electrode, when a first region is a region of the p-type light-absorbing layer from an interface between the p-type light absorbing layer and n-type layer to a depth of 10 nm toward the p-electrode and a second region is a region of the p-type light-absorbing layer from the interface between the p-type light absorbing layer and the n-type layer to a depth of 100 nm toward the p-electrode excluding the first region, a maximum intensity of an intensity profile of a HAADF-STEM image of the first region is 95% or more and 105% or less of an average intensity of an intensity profile of a HAADF-STEM of the second region.

Abstract: A solar cell of an embodiment includes a p-electrode; an n-electrode; a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and an n-type layer located between the first n-type layer and the n-electrode, the n-type layer including a first n-type layer and a second n-type layer or a first n-type region and a second n-type region; wherein the first n-type layer and the first n-type region is located on the p-type light-absorbing layer side, the second n-type layer and the second n-type region is located on the n-electrode side, the first n-type layer and the first n-type region mainly contain a compound represented by Gax1M1x2Ox3, the M1 is one or more selected from the group consisting of Hf, Zr, In, Zn, Ti, Al, B, Sn, Si, and Ge, the x1, the x2, and the x3 are more than 0, and the x3 when a sum of the x1 and the x2 is 2 is 3.0 or more and 3.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gav1Znv2Snv3M1v4Ov5, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

Abstract: A method for manufacturing a stacked thin film of an embodiment includes forming a p-electrode on a substrate, forming a film that mainly contains a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, and performing an oxidation treatment on the film that mainly contains the cuprous oxide and/or the complex oxide of cuprous oxides. An ozone partial pressure in the oxidation treatment is 5 [Pa] or more and 200 [Pa] or less, a treatment temperature in the oxidation treatment is 273 [K] or more and 323 [K] or less, and a treatment time in the oxidation treatment is 1 second or more and 60 minutes or less.

Abstract: A solar cell of an embodiment includes: a first electrode; a second electrode; a light-absorbing layer interposed between the first electrode and the second electrode; a dot region interposed between the first electrode and the light-absorbing layer, the dot region including dots.

Abstract: A freshness label in an embodiment includes a base material having a fluid retention capacity and a phosphor layer on a surface of the base material. The phosphor layer includes an aggregation-induced phosphor. The base material has a porous or mesh structure. The aggregation-induced phosphor comprises a phosphor having a polar functional group or the like. The freshness label can be used to detect spoilage and/or deterioration of fresh food according to changed in fluorescence intensity provided by the aggregation-induced phosphor.

Abstract: According to one embodiment, a freshness measurement system capable of quantitatively evaluating the freshness of a perishable food by a simpler method than a related art is provided. A freshness measurement system according to an embodiment includes an irradiation unit, a measurement unit, and a processing unit. The irradiation unit irradiates a phosphor that changes the intensity of fluorescence according to the concentration of a component released from a test subject with an excitation light. The measurement unit measures the intensity of fluorescence emitted by the phosphor. The processing unit determines the freshness index of the test subject using the intensity. The freshness index is, for example, a K value.

Abstract: A solar cell of an embodiment includes: a first electrode; a second electrode; a light-absorbing layer interposed between the first electrode and the second electrode; a dot region interposed between the first electrode and the light-absorbing layer, the dot region including dots.

Abstract: According to one embodiment, the organic electroluminescent device includes an anode, a cathode provided apart from the anode, and a luminous layer. The luminous layer is disposed between the anode and the cathode and contains a host material and a luminous dopant. The host material includes a polymer having a skeleton represented by Formula 1 below in a repeating unit, and a number of repetitions being 20 to 10,000. (X is an element composing a polymer backbone, R1, R2, R3, and R4 may be identical or different, and each of them is selected from a hydrogen atom, an alkyl group, an aromatic ring group, an alkoxy group, an alkothio group, and a halogen atom.

Abstract: An organic electroluminescent device includes first and second electrode and an organic light emitting layer. The first electrode has an upper face. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. The second electrode includes a plurality of conductive parts. The conductive parts extend in a first direction parallel to the upper face and are arranged in a second direction. The second direction is parallel to the upper face and intersects with the first direction. When a length of each of the conductive parts in the second direction is set to W1 (micrometer), and a pitch of each of the conductive parts is set to P1 (micrometer). The W1 and the P1 satisfy a relationship of W1??647(1?W1/P1)+511 and a relationship of W1??882(1?W1/P1)+847.

Abstract: According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide. The buffer layer is provided between the organic photoelectric conversion layer and the metal-oxide layer. The buffer layer includes a material having a property of blocking an exciton, and a glass transition temperature of the material is higher than or equal to 415K.

Abstract: An organic electroluminescent device includes first and second electrode and an organic light emitting layer. The first electrode has an upper face. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. The second electrode includes a plurality of conductive parts. The conductive parts extend in a first direction parallel to the upper face and are arranged in a second direction. The second direction is parallel to the upper face and intersects with the first direction. When a length of each of the conductive parts in the second direction is set to W1 (micrometer), and a pitch of each of the conductive parts is set to P1 (micrometer). The W1 and the P1 satisfy a relationship of W1??647(1?W1/P1)+511 and a relationship of W1??882(1?W1/P1)+847.

Abstract: According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n1. A second substrate is joined to an upper surface of the first substrate and has a second refractive index n2 higher than the first refractive index n1. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.