Patents by Inventor Yukito Nakagawa
Yukito Nakagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10026591Abstract: An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.Type: GrantFiled: July 13, 2017Date of Patent: July 17, 2018Assignee: Canon Anelva CorporationInventors: Yoshimitsu Kodaira, Yukito Nakagawa, Motozo Kurita
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Publication number: 20170316918Abstract: An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.Type: ApplicationFiled: July 13, 2017Publication date: November 2, 2017Applicant: CANON ANELVA CORPORATIONInventors: Yoshimitsu KODAIRA, Yukito NAKAGAWA, Motozo KURITA
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Patent number: 9734989Abstract: A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.Type: GrantFiled: September 3, 2013Date of Patent: August 15, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Kodaira, Yukito Nakagawa, Motozo Kurita
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Patent number: 9721747Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.Type: GrantFiled: December 1, 2016Date of Patent: August 1, 2017Assignee: CANON ANELVA CORPORATIONInventors: Masashi Tsujiyama, Yukito Nakagawa, Yasushi Yasumatsu
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Patent number: 9685299Abstract: In order to easily exchange a depleted dielectric member in a substrate processing apparatus, a faraday shield provided opposite to an antenna across a component member made of a dielectric, a first dielectric member provided opposite to the antenna across the component member and the faraday shield, and a second dielectric member provided opposite to the antenna across the component member, the faraday shield, and the first dielectric member are provided, and the second dielectric member is placed on a protrusion part formed on a vacuum container in the substrate processing apparatus.Type: GrantFiled: December 19, 2012Date of Patent: June 20, 2017Assignee: Canon Anelva CorporationInventor: Yukito Nakagawa
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Patent number: 9640754Abstract: This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.Type: GrantFiled: November 11, 2013Date of Patent: May 2, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yukito Nakagawa, Yoshimitsu Kodaira, Motozo Kurita, Takashi Nakagawa
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Publication number: 20170084419Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.Type: ApplicationFiled: December 1, 2016Publication date: March 23, 2017Inventors: Masashi Tsujiyama, Yukito Nakagawa, Yasushi Yasumatsu
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Patent number: 9190287Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.Type: GrantFiled: January 21, 2014Date of Patent: November 17, 2015Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Masayoshi Ikeda, Yukito Nakagawa, Yasushi Kamiya, Yoshimitsu Kodaira
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Publication number: 20150318185Abstract: A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.Type: ApplicationFiled: September 3, 2013Publication date: November 5, 2015Applicant: CANON ANELVA CORPORATIONInventors: Yoshimitsu KODAIRA, Yukito NAKAGAWA, Motozo KURITA
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Publication number: 20150311432Abstract: This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.Type: ApplicationFiled: November 11, 2013Publication date: October 29, 2015Applicant: CANON ANELVA CORPORATIONInventors: Yukito NAKAGAWA, Yoshimitsu KODAIRA, Motozo KURITA, Takashi NAKAGAWA
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Publication number: 20140353142Abstract: In order to easily exchange a depleted dielectric member in a substrate processing apparatus, a faraday shield provided opposite to an antenna across a component member made of a dielectric, a first dielectric member provided opposite to the antenna across the component member and the faraday shield, and a second dielectric member provided opposite to the antenna across the component member, the faraday shield, and the first dielectric member are provided, and the second dielectric member is placed on a protrusion part formed on a vacuum container in the substrate processing apparatus.Type: ApplicationFiled: December 19, 2012Publication date: December 4, 2014Inventor: Yukito Nakagawa
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Publication number: 20140206197Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.Type: ApplicationFiled: January 21, 2014Publication date: July 24, 2014Applicant: CANON ANELVA CORPORATIONInventors: Takashi NAKAGAWA, Masayoshi IKEDA, Yukito NAKAGAWA, Yasushi KAMIYA, Yoshimitsu KODAIRA
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Patent number: 8475672Abstract: The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel (1) is divided by a grid (4) having communication holes into a plasma generation chamber (2) and a plasma processing chamber (5). On the upper wall (26) of the plasma generation chamber (2), magnetic coils (12) are arranged such that magnetic field lines within the vacuum vessel (1) point from the center of the vacuum vessel (1) to a side wall (27), and, outside the side wall (27) of the plasma generation chamber (2), ring-shaped permanent magnets (13) are arranged such that a polarity pointing to the inside of the vacuum vessel (1) is a north pole and a polarity pointing to the outside of the vacuum vessel (1) is a south pole.Type: GrantFiled: July 29, 2011Date of Patent: July 2, 2013Assignee: Canon Anelva CorporationInventors: Kazuyuki Iori, Yukito Nakagawa
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Publication number: 20110309050Abstract: The present invention provides a plasma processing device and a plasma processing method that can easily adjust plasma density distribution while making the plasma density uniform, and a method of manufacturing an element including a substrate to be processed. In an embodiment of the present invention, the inside of a vacuum vessel (1) is divided by a grid (4) having communication holes into a plasma generation chamber (2) and a plasma processing chamber (5). On the upper wall (26) of the plasma generation chamber (2), magnetic coils (12) are arranged such that magnetic field lines within the vacuum vessel (1) point from the center of the vacuum vessel (1) to a side wall (27), and, outside the side wall (27) of the plasma generation chamber (2), ring-shaped permanent magnets (13) are arranged such that a polarity pointing to the inside of the vacuum vessel (1) is a north pole and a polarity pointing to the outside of the vacuum vessel (1) is a south pole.Type: ApplicationFiled: July 29, 2011Publication date: December 22, 2011Applicant: CANON ANELVA CORPORATIONInventors: Kazuyuki Iori, Yukito Nakagawa
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Patent number: 8007633Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced.Type: GrantFiled: March 28, 2011Date of Patent: August 30, 2011Assignee: Canon Anelva CorporationInventors: Akihiro Egami, Masayoshi Ikeda, Yasumi Sago, Yukito Nakagawa
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Publication number: 20110174221Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced.Type: ApplicationFiled: March 28, 2011Publication date: July 21, 2011Applicant: CANON ANELVA CORPORATIONInventors: Akihiro Egami, Masayoshi Ikeda, Yasumi Sago, Yukito Nakagawa
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Publication number: 20080113149Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced.Type: ApplicationFiled: December 26, 2007Publication date: May 15, 2008Applicant: ANELVA CORPORATIONInventors: Akihiro Egami, Masayoshi Ikeda, Yasumi Sago, Yukito Nakagawa
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Patent number: 6664496Abstract: A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.Type: GrantFiled: March 28, 2002Date of Patent: December 16, 2003Assignee: Anelva CorporationInventors: Yoshimi Watabe, Shinya Hasegawa, Yoichiro Numasawa, Yukito Nakagawa
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Publication number: 20030024478Abstract: This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced.Type: ApplicationFiled: August 5, 2002Publication date: February 6, 2003Applicant: ANELVA CORPORATIONInventors: Akihiro Egami, Masayoshi Ikeda, Yasumi Sago, Yukito Nakagawa
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Publication number: 20020144980Abstract: A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.Type: ApplicationFiled: March 28, 2002Publication date: October 10, 2002Applicant: ANELVA CORPORATIONInventors: Yoshimi Watabe, Shinya Hasegawa, Yoichiro Numasawa, Yukito Nakagawa