Abstract: A measurement probe of the present disclosure that scans a surface of a measurement object to measure a three-dimensional shape or the like of the surface of the measurement object includes a first movable portion having a stylus, a second movable portion that is connected to the first movable portion to be movable in a Z direction, a third movable portion that is connected to the second movable portion to be movable in the Z direction, a first position measurer that measures a first position of the first movable portion in the Z direction, a second position measurer that measures a second position of the second movable portion in the Z direction, and a third position measurer that measures a third position of the third movable portion in the Z direction. A first relative position is calculated based on the first position and the second position. A second relative position is calculated based on the first position and the third position.

Abstract: A measurement probe of the present disclosure that scans a surface of a measurement object to measure a three-dimensional shape or the like of the surface of the measurement object includes a first movable portion having a stylus, a second movable portion that is connected to the first movable portion to be movable in a Z direction, a third movable portion that is connected to the second movable portion to be movable in the Z direction, a first position measurer that measures a first position of the first movable portion in the Z direction, a second position measurer that measures a second position of the second movable portion in the Z direction, and a third position measurer that measures a third position of the third movable portion in the Z direction. A first relative position is calculated based on the first position and the second position. A second relative position is calculated based on the first position and the third position.

Abstract: A semiconductor substrate having dot marks is provided. Particularly, a semiconductor substrate having dot marks having an improved reading rate is provided. In a semiconductor substrate having a plurality of dot marks formed of recess portions having an inverted frustum shape, the plurality of dot marks constitutes a two-dimensional code disposed in a rectangular region of 0.25 mm2 to 9 mm2, the diameter W of the recess portion on the surface of the semiconductor substrate is 20 ?m to 200 ?m, is larger than the diameter w of the bottom surface of the recess portion, and is smaller than the thickness of the semiconductor substrate, the side surface of the recess portion has four or more trapezoidal flat taper surfaces, and the taper angle of the taper surface is in a range of 44° to 65° with respect to the surface of the semiconductor substrate.

Abstract: The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.

Abstract: A semiconductor substrate having dot marks is provided. Particularly, a semiconductor substrate having dot marks having an improved reading rate is provided. In a semiconductor substrate having a plurality of dot marks formed of recess portions having an inverted frustum shape, the plurality of dot marks constitutes a two-dimensional code disposed in a rectangular region of 0.25 mm2 to 9 mm2, the diameter W of the recess portion on the surface of the semiconductor substrate is 20 ?m to 200 ?m, is larger than the diameter w of the bottom surface of the recess portion, and is smaller than the thickness of the semiconductor substrate, the side surface of the recess portion has four or more trapezoidal flat taper surfaces, and the taper angle of the taper surface is in a range of 44° to 65° with respect to the surface of the semiconductor substrate.

Abstract: The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.