Abstract: A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.

Abstract: A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.

Abstract: An object of the present invention is to enhance the reliability of an MEMS sensor formed on a semiconductor integrated circuit device. To achieve this object, a semiconductor device of the present invention comprises: a semiconductor integrated circuit device; a lower passivation film of silicon nitride, etc. . . . formed on the semiconductor integrated circuit device and having high moisture resistance and high chemical resistance; a MEMS portion formed on the lower passivation film and including a cavity 12; and an upper passivation film 11 formed on the top surface of the MEMS portion such that the MEMS portion is hermetically sealed by the upper and lower passivation films.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.

Abstract: The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition T1 is selected optionally with reference the heat treatment temperature T2 and the pseudo-crystallization temperature T3. T2, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.

Abstract: A weight of an inertial sensor if formed from a plurality of divided weights, and the divided weights are connected to each other by elastically deformable beams. A movable range and a mass of each of the divided weights and a rigidity of each of the beams are adjusted and a plurality of deformation modes having different sensitivity ranges with respect to the acceleration are used in combination. By this means, it is possible to improve a detecting sensitivity of an acceleration and widen an acceleration response range.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.

Abstract: A weight of an inertial sensor if formed from a plurality of divided weights, and the divided weights are connected to each other by elastically deformable beams. A movable range and a mass of each of the divided weights and a rigidity of each of the beams are adjusted and a plurality of deformation modes having different sensitivity ranges with respect to the acceleration are used in combination. By this means, it is possible to improve a detecting sensitivity of an acceleration and widen an acceleration response range.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: An object of the present invention is to enhance the reliability of an MEMS sensor formed on a semiconductor integrated circuit device. To achieve this object, a semiconductor device of the present invention comprises: a semiconductor integrated circuit device; a lower passivation film of silicon nitride, etc. formed on the semiconductor integrated circuit device and having high moisture resistance and high chemical resistance; an MEMS portion formed on the lower passivation film and including a cavity 12; and an upper passivation film 11 formed on the top surface of the MEMS portion such that the MEMS portion is hermetically sealed by the upper and lower passivation films.

Abstract: A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

Abstract: The objects of the present invention are to form MEMS structures of which stress is controlled while maintaining the performance of high-performance LSI, to integrate MEMS Structures and LSI on a single chip, to electrically and chemically protect the MEMS structure and to reduce the stress of the whole movable part of the MEMS structure. To achieve the above objects, a silicide film formable at a low temperature is used for the MEMS structure. The temperature at the silicide film deposition T1 is selected optionally with reference the heat treatment temperature T2 and the pseudo-crystallization temperature T3. T2, the temperature of manufacturing process after the silicide film deposition, is determined does not cause the degradation of the characteristics of the high-performance LSI indispensable. Thus, the residual stress of the MEMS structures may be controlled.

Abstract: In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A1, and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractor metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.

Abstract: A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.

Abstract: In extremely minute copper wiring the width or the thickness of which is equal to or shorter than approximately the double length of the mean free path of a copper atom, a value of the resistance may be larger, compared with aluminum wiring of the same extent and it is difficult to realize wiring having small resistance. To solve such a problem, aluminum wiring is used for wiring having form in which the respective resistivities ? of both wirings have the relation of ?Al<?Cu and copper wiring is used for wiring having form in which the respective resistivities ? of both wirings have the relation of ?Al??Cu. As a result, a semiconductor device which has small resistance, transmits a signal at high speed and is provided with a multilayer wiring layer can be realized.

Abstract: In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A1, and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractor metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.