Patents by Inventor Yuko Itoh

Yuko Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and process of fabricating same
    Patent number: 6537865
    Abstract: A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
    Type: Grant
    Filed: August 16, 2001
    Date of Patent: March 25, 2003
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Kazuyuki Inokuchi, Seiichi Takahashi, Shinichi Hoshi, Tadashi Saito, Nobusuke Yamamoto, Yuko Itoh, Nobumasa Higemoto
  • Semiconductor device and process of fabricating same
    Publication number: 20020024057
    Abstract: A semiconductor device according to the invention comprises a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure, having an under structure penetrating through the cap layer and reaching the Schottky layer, and an upper structure larger than the under structure in a cross-sectional area and overlying the cap layer. With such a construction as described, surface defect is unlikely to occur, and therefore, a highly reliable semiconductor device can be fabricated.
    Type: Application
    Filed: August 16, 2001
    Publication date: February 28, 2002
    Inventors: Kazuyuki Inokuchi, Seiichi Takahashi, Shinichi Hoshi, Tadashi Saito, Nobusuke Yamamoto, Yuko Itoh, Nobumasa Higemoto
  • Semiconductor device with Schottky layer
    Patent number: 6294801
    Abstract: A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
    Type: Grant
    Filed: April 22, 1999
    Date of Patent: September 25, 2001
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Kazuyuki Inokuchi, Seiichi Takahashi, Shinichi Hoshi, Tadashi Saito, Nobusuke Yamamoto, Yuko Itoh, Nobumasa Higemoto