Abstract: The deposition apparatus includes a chamber including a deposition space, a stage that supports a substrate, a light source, a gas supply, and a heater. The light source includes an emission source that emits an energy ray and is disposed to face the deposition space. The gas supply includes a shower plate and a gas diffusion space. The shower plate includes a first surface that faces the light source, a second surface that faces the stage, and a plurality of through-holes that penetrates the first surface and the second surface, the shower plate allowing the energy ray to transmit therethrough. The gas diffusion space faces the first surface and diffuses raw material gas including an energy ray-curable resin that cures when the energy ray-curable resin is irradiated with the energy ray. The gas supply supplies the raw material gas into the deposition space from the gas diffusion space. The heater heats the first surface of the shower plate.

Abstract: A flow resistant part having a rod shape is disposed in a raw liquid introduction path in a manner such that the raw liquid is sprayed onto a vaporization plate to reduce the conductance of the raw liquid introduction path with respect to the raw liquid. Because the pressure on an outlet side of the liquid mass flow controller is increased, and the pressure difference from the pressure on the inlet side of the liquid mass flow controller is reduced, the occurrence of cavitation can be prevented. A plurality of the flow resistant parts can be provided.

Abstract: An object of the present invention is to provide an antibody which can be a substitute for IVIG and exhibits high binding activity to an Fc? receptor, DNA encoding the antibody, a vector including the DNA, a transformant obtained by the introduction of the vector, a method for manufacturing an antibody by using the transformant, and therapeutic agent for treatment of autoimmune diseases containing the antibody as an active component. The present invention relates to a monoclonal antibody which specifically recognizes a ? chain of human haptoglobin consisting of an amino acid sequence represented by SEQ ID NO: 70 and forms a polyvalent immune complex by binding to the human haptoglobin.

Abstract: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.

Abstract: According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

Abstract: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.

Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Abstract: According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

Abstract: A compound has an sEH-inhibiting activity and provides a pharmaceutical having a therapeutic effect and a prophylactic effect on chronic renal disease and pulmonary hypertension based on the sEH-inhibiting action. The nipecotic acid derivatives are represented by the chemical formula below and pharmaceutically acceptable salts thereof.

Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Abstract: A semiconductor light-emitting device is provided with a semiconductor layer including a first surface, a second surface opposite to the first surface, a luminous layer, and a first electrode formed on the first surface. The first surface has flat and rough portions. The first electrode has a pad and a fine wire electrode that is narrower than the pad. The fine wire electrode is formed on the flat portions but not on the rough portions. One or more metal contacts are disposed on the second surface to be under the rough portions.

Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Abstract: According to one embodiment, in a semiconductor light emitting device, a substrate has a first surface and a second surface to face to each other, and side surfaces each having a first region extending approximately vertically from the first surface toward the second surface side and a second region sloping broadly from the first region toward the second surface side. A semiconductor laminated body is provided on the first surface of the substrate and includes a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type which are laminated in the order. A reflection film is provided on the second surface of the substrate.

Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Abstract: According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Abstract: According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.