Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Abstract: A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are independently an alkyl group and R9 to R12 are independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R9, R10, R11, and R12 is substituted by an electron-withdrawing group.

Abstract: A photoelectric conversion element includes: a first electrode; a second electrode opposite to the first electrode; and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a donor semiconductor, a first fullerene derivative, a second fullerene derivative different in molecular structure from the first fullerene derivative, and a polymer. The polymer contains at least one selected from the group consisting of polyvinylcarbazole, poly(triarylamine), polyfluorene, a polyvinylcarbazole derivative, a poly(triarylamine) derivative, and a polyfluorene derivative.

Abstract: An imaging device includes a first pixel, a second pixel, and a first voltage supply circuit. The first pixel includes a first photoelectric converter that generates signal charge by photoelectric conversion and a first signal detection circuit connected to the first photoelectric converter. The second pixel includes a second photoelectric converter that generates signal charge by photoelectric conversion and a second signal detection circuit connected to the second photoelectric converter. The first photoelectric converter includes a first pixel electrode, a first counter electrode facing the first pixel electrode, and a first photoelectric conversion layer located between the first pixel electrode and the first counter electrode. A voltage that the first voltage supply circuit applies between the first pixel electrode and the first counter electrode is switched between a plurality of voltages in part of a one-frame period excluding a readout period and a reset period of the second photoelectric converter.

Abstract: A photoelectric conversion device includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode and including a bulk heterojunction layer containing a donor organic compound and an acceptor organic compound. The donor organic compound includes a first substituent. The acceptor organic compound includes an aromatic portion and a second substituent binding to the aromatic portion and having dipole-dipole interaction with the first substituent.

Abstract: An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: A photocurrent multiplication device having an external quantum efficiency of 100% or more includes at least one first electrode, at least one second electrode facing the at least one first electrode, and a photoelectric conversion film that is located between the at least one first electrode and the at least one second electrode and that includes a donor material and an acceptor material. The photoelectric conversion film at least partially has a sea-island structure in which the donor material is interspersed in the photoelectric conversion film.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.

Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: An optical sensor includes a substrate, a photoelectric conversion layer, a first electrode, and a second electrode. The photoelectric conversion layer has a first surface facing the substrate, a second surface located opposite the first surface, and at least one side surface connecting the first surface with the second surface. The photoelectric conversion layer is supported by the substrate. The first electrode includes a first portion and a second portion separated from the first portion. The second portion is closer to the second surface than the first portion is. The first electrode is provided on the at least one side surface. The second electrode is provided on the at least one side surface.

Abstract: A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are each independently an alkyl group, and R9 and R10 are each independently an aryl group.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are independently an alkyl group and R9 to R12 are independently an aryl group, and at least one hydrogen atom in at least one selected from the group consisting of R9, R10, R11, and R12 is substituted by an electron-withdrawing group.

Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).

Abstract: Provision of an emulsified composition which contains a stably emulsified ceramide, has a smooth feel of use, and forms a persistent applied film. The emulsified composition is provided containing (A) an anionic surfactant, (B) a cationic surfactant, (C) a ceramide, and (D) water, wherein the mass ratio of Component (A) to Component (B), A/B, is 0.5 or more and 60 or less.

Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).

Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).