Patents by Inventor Yuko Ninomiya

Yuko Ninomiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High aspect ratio mask open without hardmask
    Publication number: 20070037100
    Abstract: A method of etching a stack of dielectric mask layers by reactive ion etch steps in order to open an aperture for etching into a semiconductor substrate improves the selectivity of the reactive ion etch relative to photoresist to the extent that an etch of an equivalent of 2000 nm of oxide is made with only photoresist as the etch mask, instead of a hardmask, thereby permitting the etch to be performed in a single chamber of an etch tool.
    Type: Application
    Filed: August 9, 2005
    Publication date: February 15, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Johnathan Falterrneier, Yuko Ninomiya
  • DRAM BURIED STRAP PROCESS WITH SILICON CARBIDE
    Publication number: 20050017282
    Abstract: In the process of forming a trench capacitor, the conductive strap connecting the center electrode of the capacitor with a circuit element in the substrate, such as the pass transistor of a DRAM cell, is separated from the crystalline substrate material by a barrier layer of silicon carbide formed during the process of etching the material within the trench, such as an oxide collar, using a reactive ion etch process with an etchant gas that contains carbon, such as C4F8.
    Type: Application
    Filed: July 25, 2003
    Publication date: January 27, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David Dobuzinsky, Jonathan Faltermeier, Philip Flaitz, Rajarao Jammy, Yuko Ninomiya, Ravikumar Ramachandran, Viraj Sardesai, Yun Wang