Abstract: A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

Abstract: A method of manufacturing a semiconductor light emitting device. The method includes: mounting a semiconductor light emitting element on a flat substrate; covering the semiconductor light emitting element on the flat substrate by a cover layer in a domed shape to form a light emitting device, the cover layer including at least a phosphor layer and a coating resin layer that are laminated in order, so as to fill around the semiconductor light emitting element; measuring an emission condition of the light emitting device; and forming a convex lens unit on the outermost of the coating resin layer using a liquid droplet discharging apparatus to adjust an emission distribution of the light emitting device based on the measured emission condition.

Abstract: A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 ?m or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical

Abstract: A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first condu

Abstract: An inkjet recording apparatus includes: a head unit including: an ultrasonic wave generation unit that generates ultrasonic waves; an ultrasonic wave focus unit that focuses the ultrasonic waves to an ultrasonic wave focus position; an ultrasonic wave transmission unit that propagates the ultrasonic waves from the ultrasonic wave focus unit; and a wall plate that covers the ultrasonic wave generation unit, the ultrasonic wave focus unit and the ultrasonic wave transmission unit; an annular film that rotates while sliding along an exterior of the head unit; a film drive mechanism that rotates the film; and an ink application unit that applies ink over the film to form an ink layer, wherein the ultrasonic wave focus position of the head unit is directing to a position of the ink layer so as to eject an ink from the ink layer.

Abstract: A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

Abstract: A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

Abstract: According to an embodiment, an image shift can be decreased by a photoconductor belt which has a photosensitive layer formed on the surface of a cylindrically formed belt, a pair of rollers which is placed to apply tension to a photoconductor belt, and rotates the photoconductor belt in a specified direction, a charger which is placed opposite to the surface of the photoconductor belt placed between the pair of rollers, and charges the photosensitive layer, a light source which forms a latent image on the charged photosensitive layer, a developing unit which supplies a developing solution to the photosensitive layer having a latent image, develop the latent image, and forms a toner image, and an absorbing roller which is placed on the backside of the photoconductor belt placed between a pair of rollers, and absorbs the photoconductor belt.

Abstract: An inkjet recording apparatus includes: an ink holding chamber having a through hole to jet ink, and holding the ink; and a head unit jetting the ink held in the ink holding chamber from the through hole. The head unit includes an ultrasonic wave generation member, an ultrasonic wave focusing member focusing the ultrasonic waves generated at the ultrasonic wave generation member in a vicinity of the through hole, an ultrasonic wave propagation portion propagateting the ultrasonic waves leaving the ultrasonic wave focusing member, and a container portion containing the ultrasonic wave generation member, the ultrasonic wave focusing member, and the ultrasonic wave propagation portion.

Abstract: A method of manufacturing a semiconductor light emitting device. The method includes: mounting a semiconductor light emitting element on a flat substrate; covering the semiconductor light emitting element on the flat substrate by a cover layer in a domed shape to form a light emitting device, the cover layer including at least a phosphor layer and a coating resin layer that are laminated in order, so as to fill around the semiconductor light emitting element; measuring an emission condition of the light emitting device; and forming a convex lens unit on the outermost of the coating resin layer using a liquid droplet discharging apparatus to adjust an emission distribution of the light emitting device based on the measured emission condition.

Abstract: A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

Abstract: A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 ?m or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical

Abstract: According to an embodiment, an image shift can be decreased by a photoconductor belt which has a photosensitive layer formed on the surface of a cylindrically formed belt, a pair of rollers which is placed to apply tension to a photoconductor belt, and rotates the photoconductor belt in a specified direction, a charger which is placed opposite to the surface of the photoconductor belt placed between the pair of rollers, and charges the photosensitive layer, a light source which forms a latent image on the charged photosensitive layer, a developing unit which supplies a developing solution to the photosensitive layer having a latent image, develop the latent image, and forms a toner image, and an absorbing roller which is placed on the backside of the photoconductor belt placed between a pair of rollers, and absorbs the photoconductor belt.

Abstract: According to an embodiment, an image shift can be decreased by a photoconductor belt which has a photosensitive layer formed on the surface of a cylindrically formed belt, a pair of rollers which is placed to apply tension to a photoconductor belt, and rotates the photoconductor belt in a specified direction, a charger which is placed opposite to the surface of the photoconductor belt placed between the pair of rollers, and charges the photosensitive layer, a light source which forms a latent image on the charged photosensitive layer, a developing unit which supplies a developing solution to the photosensitive layer having a latent image, develop the latent image, and forms a toner image, and an absorbing roller which is placed on the backside of the photoconductor belt placed between a pair of rollers, and absorbs the photoconductor belt.

Abstract: In liquid-developing image formation, a ghost image caused by the contact between a photosensitive member and an absorbing roller to collect a surplus liquid developer is prevented by preventing occurrence of a speed difference (relative speed) between a photosensitive member and a porous member (an absorbing roller) and by keeping an optimum pressing force from a porous member to a visible image on a photosensitive member.

Abstract: An inkjet recording apparatus includes: a head unit including: an ultrasonic wave generation unit that generates ultrasonic waves; an ultrasonic wave focus unit that focuses the ultrasonic waves to an ultrasonic wave focus position; an ultrasonic wave transmission unit that propagates the ultrasonic waves from the ultrasonic wave focus unit; and a wall plate that covers the ultrasonic wave generation unit, the ultrasonic wave focus unit and the ultrasonic wave transmission unit; an annular film that rotates while sliding along an exterior of the head unit; a film drive mechanism that rotates the film; and an ink application unit that applies ink over the film to form an ink layer, wherein the ultrasonic wave focus position of the head unit is directing to a position of the ink layer so as to eject an ink from the ink layer.

Abstract: In liquid-developing image formation, a ghost image caused by the contact between a photosensitive member and an absorbing roller to collect a surplus liquid developer is prevented by preventing occurrence of a speed difference (relative speed) between a photosensitive member and a porous member (an absorbing roller) and by keeping an optimum pressing force from a porous member to a visible image on a photosensitive member.

Abstract: A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertical transfer electrodes formed above the semiconductor substrate, crossing the vertical channels; a horizontal channel disposed in the surface layer coupled to the vertical channels, having a first portion with transfer stages, each including a barrier region and a well region, and a second portion constituting a gate region with gradually decreasing width, and including an upstream region and a downstream region of different effective impurity concentration, establishing a built-in potential; horizontal transfer electrodes disposed above respective transfer stages of the horizontal channel; an output gate electrode disposed above the gate region; a floating diffusion region disposed in the surface layer coupled to the gate region of the horizontal

Abstract: In liquid-developing image formation, a ghost image caused by the contact between a photosensitive member and an absorbing roller to collect a surplus liquid developer is prevented by preventing occurrence of a speed difference (relative speed) between a photosensitive member and a porous member (an absorbing roller) and by keeping an optimum pressing force from a porous member to a visible image on a photosensitive member.

Abstract: A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first condu