Patents by Inventor Yuko Ohgishi
Yuko Ohgishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8183603Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.Type: GrantFiled: February 22, 2007Date of Patent: May 22, 2012Assignee: Sony CorporationInventors: Tetsuji Yamaguchi, Yasushi Maruyama, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
-
Patent number: 8097928Abstract: A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.Type: GrantFiled: December 19, 2008Date of Patent: January 17, 2012Assignee: Sony CorporationInventors: Harumi Ikeda, Susumu Hiyama, Takashi Ando, Kiyotaka Tabuchi, Tetsuji Yamaguchi, Yuko Ohgishi
-
Patent number: 8034649Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: GrantFiled: April 20, 2010Date of Patent: October 11, 2011Assignee: Sony CorporationInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20110164159Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.Type: ApplicationFiled: March 14, 2011Publication date: July 7, 2011Applicant: SONY CORPORATIONInventor: Yuko Ohgishi
-
Publication number: 20110143488Abstract: A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.Type: ApplicationFiled: February 15, 2011Publication date: June 16, 2011Applicant: SONY CORPORATIONInventors: Harumi Ikeda, Susumu Hiyama, Takashi Ando, Kiyotaka Tabuchi, Tetsuji Yamaguchi, Yuko Ohgishi
-
Patent number: 7943446Abstract: A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating filmsType: GrantFiled: January 12, 2007Date of Patent: May 17, 2011Assignee: Sony CorporationInventor: Yuko Ohgishi
-
Patent number: 7939359Abstract: A solid state imaging device includes: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.Type: GrantFiled: September 25, 2008Date of Patent: May 10, 2011Assignee: Sony CorporationInventor: Yuko Ohgishi
-
Publication number: 20110089313Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: December 23, 2010Publication date: April 21, 2011Applicant: SONY CORPORATIONInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20110089312Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: December 23, 2010Publication date: April 21, 2011Applicant: SONY CORPORATIONInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20110058062Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.Type: ApplicationFiled: November 12, 2010Publication date: March 10, 2011Applicant: SONY CORPORATIONInventors: Yasushi Maruyama, Tetsuji Yamaguchi, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
-
Publication number: 20100203669Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: April 20, 2010Publication date: August 12, 2010Applicant: SONY CORPORATIONInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20100200942Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: April 20, 2010Publication date: August 12, 2010Applicant: Sony CorporationInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20100193669Abstract: Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.Type: ApplicationFiled: August 20, 2007Publication date: August 5, 2010Applicant: SONY CORPORATIONInventors: Tetsuji Yamaguchi, Yuko Ohgishi, Takashi Ando, Harumi Ikeda
-
Publication number: 20100141816Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.Type: ApplicationFiled: February 11, 2010Publication date: June 10, 2010Applicant: SONY CORPORATIONInventors: Yasushi Maruyama, Tetsuji Yamaguchi, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
-
Publication number: 20090303371Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.Type: ApplicationFiled: June 8, 2009Publication date: December 10, 2009Applicant: SONY CORPORATIONInventors: Taiichiro Watanabe, Akihiro Yamada, Hideo Kido, Hiromasa Saito, Keiji Mabuchi, Yuko Ohgishi
-
Publication number: 20090189235Abstract: A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.Type: ApplicationFiled: December 19, 2008Publication date: July 30, 2009Applicant: SONY CORPORATIONInventors: Harumi Ikeda, Susumu Hiyama, Takashi Ando, Kiyotaka Tabuchi, Tetsuji Yamaguchi, Yuko Ohgishi
-
Patent number: 7560341Abstract: The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily occurs. By utilizing this depletion, the electrical effective film thickness required by the gate dielectric film of the transistor can be increased. In contrast, the gate electrode of a high-performance transistor needs to have a high speed and a large drive current is formed from a polysilicon layer having a smaller average grain size, so that depletion of the gate electrode hardly occurs. Accordingly, the electrical effective film thickness of the gate dielectric film of the transistor can be maintained at a small value.Type: GrantFiled: January 18, 2007Date of Patent: July 14, 2009Assignee: Sony CorporationInventor: Yuko Ohgishi
-
Publication number: 20090096049Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.Type: ApplicationFiled: October 3, 2008Publication date: April 16, 2009Applicant: SONY CORPORATIONInventors: Itaru Oshiyama, Takashi Ando, Susumu Hiyama, Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda
-
Publication number: 20090090988Abstract: A solid state imaging device includes: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.Type: ApplicationFiled: September 25, 2008Publication date: April 9, 2009Applicant: Sony CorporationInventor: Yuko OHGISHI
-
Publication number: 20080199994Abstract: A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating filmsType: ApplicationFiled: January 12, 2007Publication date: August 21, 2008Inventor: Yuko Ohgishi