Abstract: A gas insulated switchgear includes a high-voltage conductor installed inside a ground tank filled with an insulation gas and the high-voltage conductor is supported on an insulation spacer and thereby fixed to the ground tank. The gas insulator switchgear is configured in such a manner that an insulation portion of the insulation spacer in contact with the insulation gas is covered with a cover film formed by hardening powder of any of thermoplastic resin, glass, cellulose, and polymer resin made of carbon and hydrogen having a particle size of 100 ?m or less with epoxy resin.

Abstract: A gas insulated switchgear includes a high-voltage conductor installed inside a ground tank filled with an insulation gas and the high-voltage conductor is supported on an insulation spacer and thereby fixed to the ground tank. The gas insulator switchgear is configured in such a manner that an insulation portion of the insulation spacer in contact with the insulation gas is covered with a cover film formed by hardening powder of any of thermoplastic resin, glass, cellulose, and polymer resin made of carbon and hydrogen having a particle size of 100 ?m or less with epoxy resin.

Abstract: The semiconductor device which can prevent destruction of a low dielectric constant film and a bump's destruction which consists of lead free solder both is obtained. A semiconductor package which has a semiconductor chip including a low dielectric constant film and a bump which consists of lead free solder, a wiring substrate by which flip chip junction of the semiconductor package was done via the bump, and under-filling resin, with which a gap between the semiconductor package and the wiring substrate is filled up, are provided. As for under-filling resin, the glass transition temperature is equal to or more than 125° C., the coefficient of thermal expansion in 125° C. is less than 40 ppm/° C., and the elastic modulus in 25° C. is less than 9 GPa.