Abstract: An electrochemical device comprises an element body 10 in which a pair of a first inner electrode and a second inner electrode are laminated to sandwich a separator layer; an exterior sheet 4 covering the element body; a first lead terminal 18 drawn to an outside of the exterior sheet 4; and a second lead terminal 28 drawn to the outside of the exterior sheet 4. A proof stress of the exterior sheet is 390 to 980 N/mm2 in JIS Z2241, and a hardness of the exterior sheet is 230 to 380 Hv in Vickers hardness (JIS Z2244).

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.

Abstract: An electrochemical device comprises an element body 10 in which a pair of a first inner electrode and a second inner electrode are laminated to sandwich a separator layer; an exterior sheet 4 covering the element body; a first lead terminal 18 drawn to an outside of the exterior sheet 4; and a second lead terminal 28 drawn to the outside of the exterior sheet 4. A proof stress of the exterior sheet is 390 to 980 N/mm2 in JIS Z2241, and a hardness of the exterior sheet is 230 to 380 Hv in Vickers hardness (JIS Z2244).

Abstract: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.

Abstract: One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil.

Abstract: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.

Abstract: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.

Abstract: One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil.

Abstract: One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 ?m or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: One capacitor fabrication process of the invention comprises a noble metal layer formation step of forming a noble metal layer on one surface of a substrate, a dielectric layer formation step of forming a dielectric layer on the noble metal layer, a metal foil formation step of forming a metal foil of 10 ?m or greater in thickness on the dielectric layer, a separation step of separating the noble metal layer from the dielectric layer at an interface, and an electrode layer formation step of forming an electrode layer on the second surface of the dielectric layer separated off by the separation step, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil formed thereon.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y,V,Mo, Co, Nb, Fe, and Cr.