Abstract: A hybrid-type thin film photoelectric converter includes a transparent electrode (12), at least one amorphous photoelectric conversion unit (20), at least one crystalline photoelectric conversion unit (30) and a backside electrode (40), successively stacked on a transparent glass substrate (11). The transparent electrode (12) has a thickness of more than 400 nm and less than 1000 nm. A transparent laminated body (10) including the glass substrate (11) and the transparent electrode (12) has a haze ratio of more than 2% and less than 10%.

Abstract: The present invention provides a photoelectric conversion device that improves photoelectric conversion efficiency with the interaction between a transparent substrate with a transparent conductive film, an antireflection film, and a photoelectric conversion unit. The antireflection film contains fine particles having an average particle diameter of 0.01 to 1.0 &mgr;m and has an uneven surface derived from the fine particles. The glass sheet with a transparent conductive film has a light transmittance of 75% or more in the wavelength region of 800 nm to 900 nm. The photoelectric conversion unit includes at least a photoelectric conversion unit including a photoelectric conversion layer having a band gap of 1.85 eV or less.

Abstract: There is provided a photovoltaic module including a transparent substrate and hybrid-type photovoltaic cells arrayed on the substrate and series connected to each other, the cells including a back electrode facing the substrate, a transparent front electrode intervening between the substrate and the back electrode, a first photovoltaic layer intervening between the front and back electrodes and comprising an amorphous semiconductor layer, a second photovoltaic layer intervening between the first photovoltaic layer and the back electrode and comprising a crystalline semiconductor layer, and a conductive interlayer with a light-transmitting-and-reflecting property intervening between the first and second photovoltaic layers and having a thickness in a range of 10 nm to 100 nm and a specific resistance in a range of 1×10−3 &OHgr;·cm to 1×10−1 &OHgr;·cm.

Abstract: A silicon-based thin film photoelectric conversion device includes a substrate 1, a back electrode 10 having a light reflecting metal film 102, at least one silicon-based photoelectric conversion unit 11 and a front transparent electrode 2, wherein at least one of the light reflecting metal film 102 and the front transparent electrode 2 has that surface thereof closer to the silicon-based photoelectric conversion unit provided with convexities and concavities having a level difference therebetween in a range of 0.01 to 2 &mgr;m and a pitch greater than the level difference and no more than 25 times the level difference.