Patents by Inventor Yuko Tomioka

Yuko Tomioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7439550
    Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: October 21, 2008
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
  • Publication number: 20060197099
    Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
    Type: Application
    Filed: March 2, 2006
    Publication date: September 7, 2006
    Inventors: Yuko Tomioka, Seiichiro Kobayashi, Kazuki Takeshima
  • Patent number: 5057102
    Abstract: A laser treatment apparatus is to treat a site of disease of a patient with a laser beam.
    Type: Grant
    Filed: May 18, 1990
    Date of Patent: October 15, 1991
    Assignee: Kabushiki Kaisha Topcon
    Inventors: Yuko Tomioka, Hiroshi Koizumi, Masatsugu Kijima