Abstract: Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10?8 A/cm2.

Abstract: Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10?8 A/cm2.

Abstract: Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10?8 A/cm2.

Abstract: Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10?8 A/cm2.

Abstract: The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.

Abstract: Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10?8 A/cm2.

Abstract: The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.

Abstract: A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B?,B?-triethynyl-N,N?,N?-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B?,B?-triethynyl-N,N?,N?-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).

Abstract: A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).

Abstract: There is disclosed a method for effectively producing a silicon-containing pentacyclic compound, wherein the method comprises reacting (a) a 1,2-bis(hydrosilyl)benzene with (b) a cyclic diyne in the presence of (c) a platinum compound. There is also disclosed a method for effectively producing a silicon-containing ladder polymer having a complete ladder structure, wherein the method comprises reacting (a) a 1,2,4,5-tetrakis(hydrosilyl)benzene with (b) a cyclic diyne in the presence of (c) a platinum compound.