Abstract: A sensor comprising: a mass element; a frame surrounding the mass element; a connecting body having flexibility, and connecting the mass element to the frame; a pressure detecting unit; and an acceleration detecting unit. The mass element comprises: a main portion comprising a through-hole passing therethrough from the top surface to the bottom surface; a mounting portion connected to the top surface of the main portion, and surrounding an outer periphery of the through-hole; a first cover portion having flexibility, connected to the mounting portion and covering the through-hole; and a second cover portion, disposed on the bottom surface of the main portion, covering the through-hole, and deformable less than the first cover portion when received an external force.

Abstract: According to one embodiment, a nonvolatile semiconductor storage device includes a memory cell, a voltage generator configured to output a first voltage and a second voltage, and a controller. The controller executes a write operation, which includes a first read operation, a program operation, and a verify operation. The controller executes the first read operation before the program operation and the verify operation. The controller executes the first read operation by applying the first voltage to a gate of the memory cell. The controller executes an erase verify operation by applying the second voltage to the gate of the memory cell. The first voltage is higher than the second voltage.

Abstract: According to one embodiment, a semiconductor memory device includes a first transistor, a detector, and a second transistor. The first transistor is capable of transferring a first voltage to a bit line. The detector reads data held by a memory cell connected to the bit line. The second transistor is capable of transferring a second voltage and a third voltage to the detector. The second voltage is generated by a source different from a source of the first voltage. The third voltage is larger than the second voltage. The second transistor charges the detector to one of the second voltage and the third voltage, while the first transistor transferring the first voltage to the bit line.

Abstract: According to one embodiment, a nonvolatile semiconductor storage device includes a memory cell, a voltage generator configured to output a first voltage and a second voltage, and a controller. The controller executes a write operation, which includes a first read operation, a program operation, and a verify operation. The controller executes the first read operation before the program operation and the verify operation. The controller executes the first read operation by applying the first voltage to a gate of the memory cell. The controller executes an erase verify operation by applying the second voltage to the gate of the memory cell. The first voltage is higher than the second voltage.

Abstract: According to one embodiment, a semiconductor memory device includes a first transistor, a detector, and a second transistor. The first transistor is capable of transferring a first voltage to a bit line. The detector reads data held by a memory cell connected to the bit line. The second transistor is capable of transferring a second voltage and a third voltage to the detector. The second voltage is generated by a source different from a source of the first voltage. The third voltage is larger than the second voltage. The second transistor charges the detector to one of the second voltage and the third voltage, while the first transistor transferring the first voltage to the bit line.

Abstract: According to one embodiment, a semiconductor memory storage apparatus includes an array, a sense amplifier, and a controller. The array includes a memory cell. The sense amplifier includes a first latch and a second latch. The first latch and the second latch are capable of storing a data read out from the memory cell. The controller performs a first operation, a second operation, and a third operation. In the first operation, the controller transfers an inverted data in the first latch to the first node and transfers the data in the second latch. In the second operation, the controller transfers the data in the first latch to the first node and transfers an inverted data in the second latch.

Abstract: A file creation method for constructing a system environment, a system environment constructing method, and a command start system. Prior to using the system, a plurality of application programs are classified into field groups, which are further divided into groups on the basis of functions thereof. The groups are further divided into input items on the basis of command options. Every layer of a hierarchy is ranked. Character strings are assigned to icons, button and data input frame so as to represent names or functions of groups. Files are created for every layer and group so that they contain information on the ranks, icons, and linkages between files. The files are read out and displayed in a top-down manner according to their ranks, so that a specific application program can be designated by selecting at least one icon or option, or entering an input item. Thereafter, the application program will be started.

Abstract: Characteristics of a coupled system, which consists of a plurality of unit structures coupled together, are analyzed accurately and quickly by providing, between calculating means for calculating transfer function matrices concerning unit structures and coupling means for coupling together transfer function matrices according to the definitions of coupling, co-ordinate conversion means for converting transfer function matrices into those in the overall system.