Abstract: The present invention relates to a system comprising threat evaluation and sensor/weapon assignment algorithm operating units which are adapted such that they will operate any threat evaluation and sensor/weapon assignment algorithm, a simulation and analysis unit which is adapted such that it will form the area, in which threat evaluation and sensor/weapon assignment algorithms will be operated, as a virtual scenario by forming an air picture in accordance with the data it receives, an external communication unit which is in communication with the simulation and analysis unit; which can communicate correspondingly with a threat evaluation and sensor/weapon assignment algorithm operating unit; which is adapted such that it will transfer the current scenario information to the threat evaluation and sensor/weapon assignment algorithm when it is necessary and transfer the engagement results to the simulation and analysis unit by taking them back, and a communication unit which is adapted such that it will transf

Abstract: Novel N-structured In As/Al Sb(Al Ga Sb)/Ga Sb based type-II SL pin detector with p on n and n on p configurations are given to detect light in the Mid Wavelength Infrared Range—MWIR with a cut-off wavelength of 5 ?m. Better carrier confinements are performed by placing AlSb layers switching from InAs layers to Ga Sb layers successively in the growth direction throughout the SL pin diode where zero bias detectivity is improved as 6×1013 A/Hz1/2 at a wavelength of 4.2 ?m at 79K. RoA value is measured as 1.8×106 ?cm2 which is better than nBn devices. Dark current density is also obtained in the range of 4-7×10?7 A/cm at zero bias and Vb=0.3V respectively at 79K.

Abstract: Novel N-structured In As/Al Sb(Al Ga Sb)/Ga Sb based type-II SL pin detector with p on n and n on p configurations are given to detect light in the Mid Wavelength Infrared Range-MWIR with a cut-off wavelength of 5 ?m. Better carrier confinements are performed by placing AlSb layers switching from InAs layers to Ga Sb layers successively in the growth direction throughout the SL pin diode where zero bias detectivity is improved as 6×1013 A/Hz1/2 at a wavelength of 4.2 ?m at 79K. RoA value is measured as 1.8×106 ?cm2 which is better than nBn devices. Dark current density is also obtained in the range of 4-7×10?7 A/cm at zero bias and Vb=0.3V respectively at 79K.

Abstract: The present invention relates to a system comprising threat evaluation and sensor/weapon assignment algorithm operating units which are adapted such that they will operate any threat evaluation and sensor/weapon assignment algorithm, a simulation and analysis unit which is adapted such that it will form the area, in which threat evaluation and sensor/weapon assignment algorithms will be operated, as a virtual scenario by forming an air picture in accordance with the data it receives, an external communication unit which is in communication with the simulation and analysis unit; which can communicate correspondingly with a threat evaluation and sensor/weapon assignment algorithm operating unit; which is adapted such that it will transfer the current scenario information to the threat evaluation and sensor/weapon assignment algorithm when it is necessary and transfer the engagement results to the simulation and analysis unit by taking them back, and a communication unit which is adapted such that it will transf