Abstract: An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.

Abstract: A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode.

Abstract: A flat panel display device and a method of manufacturing the same are disclosed. In one embodiment, a flat panel display device includes a substrate having a thin film transistor (TFT) formed thereon, and a blocking layer is formed between the TFT and the substrate. The blocking layer is disposed only in the region vertically corresponding to an active layer of the TFT. Thus, light transmittance is not reduced, and accordingly, there is generally better luminance and image quality of the device.

Abstract: An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.

Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are disclosed. The organic light-emitting display device includes a bottom capacitor electrode that is formed over the same plane as an active layer of a thin film transistor and includes a semiconductor doped with ion impurities, a pixel electrode, and a top capacitor electrode formed over the same plane as a gate electrode, wherein a contact hole entirely exposing the pixel electrode and the top capacitor electrode is formed.

Abstract: An organic light emitting diode display device and a method of manufacturing the same are disclosed.

Abstract: A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.

Abstract: An organic light-emitting display apparatus is disclosed. In one aspect, the apparatus includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes. The apparatus also includes at least two capacitors each comprising a first electrode having a first region doped with ion impurities and a second region not doped with ion impurities, and formed on the same plane as the active layer. Each capacitor also includes a second electrode formed on the same plane as the gate electrode and disposed corresponding to the second region. The apparatus also includes a pixel electrode formed on the same plane as the gate electrode and connected to one of the source and drain electrodes, a light-emitting layer disposed on the pixel electrode, and an opposite electrode disposed on the light-emitting layer.

Abstract: An organic light-emitting display device includes a plurality of sub-pixels each comprising a light-emitting portion, a thin film transistor (TFT), and a capacitor, each of the sub-pixels emitting a different color, wherein the capacitor of at least one of the plurality of sub-pixels extends into at least one adjacent one of the sub-pixels.

Abstract: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.

Abstract: An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.

Abstract: An OLED device includes a thin film transistor including an active layer, a gate bottom electrode, a gate top electrode, an insulating layer covering the gate electrode, and a source electrode and a drain electrode on the insulating layer contacting the active layer; an organic light-emitting device electrically connected to the thin film transistor and including a sequentially stacked pixel electrode, on the same layer as the gate bottom electrode, emissive layer, and, opposite electrode, a pad bottom electrode on the same layer as the gate bottom electrode and a pad top electrode pattern on the same layer as the gate top electrode, the pad top electrode pattern including openings exposing the pad bottom electrode, and an insulation pattern covering the upper surface of the pad top electrode pattern on the same layer as the insulating layer, on an upper surface of the pad bottom electrode.

Abstract: A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

Abstract: An organic light-emitting display device. The organic light-emitting display device includes a substrate, a semiconductor layer arranged on the substrate, an insulating film arranged on the semiconductor layer and a conductive layer arranged on the insulating film, wherein the semiconductor layer comprises a plurality of protrusion lines extending in a first direction, the protrusion lines being parallel to a peripheral edge of the conductive layer.

Abstract: A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate.

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: at least one transistor, each including a semiconductor layer, a gate electrode, and source and drain electrodes; a first capacitor including a first electrode formed on the same plane as the semiconductor layer, a second electrode formed on the same plane as the gate electrode, and a third electrode formed on the same plane as the source and drain electrodes; a second capacitor including a first electrode formed on the same plane as the semiconductor layer and comprising ion impurities, and a second electrode formed on the same plane as the gate electrode; a pixel electrode formed on the same plane as the gate electrode and electrically connected to the transistor; a light-emitting layer disposed on the pixel electrode; and an opposite electrode disposed on the light-emitting layer and facing the pixel electrode.

Abstract: Provided is an organic light-emitting display device. The organic light-emitting display device includes: a substrate; a buffer layer formed on the substrate; a gate insulating layer formed on the buffer layer; a conductive layer formed on the gate insulating layer; and a pixel defined layer exposing a portion of the conductive layer to form a pad portion connected to bumps of a drive integrated circuit (IC) chip, wherein protrusions and recesses are formed on a surface of the conductive layer.

Abstract: In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. A method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention includes: respectively forming first, second, and third driving transistors in a first region, a second region, and a third region on a substrate; forming an insulating layer on the first to third driving transistors; respectively forming first, second, and third pixel electrodes on the insulating layer, the first, second, and third pixel electrodes being formed in the first, second, and third regions, respectively; forming an auxiliary electrode on a side surface of each of the first, second, and third pixel electrodes; forming an organic light emitting member on the first to third pixel electrodes; and forming a common electrode on the organic light emitting member.

Abstract: In an organic light emitting diode (OLED) display and a manufacturing method, an organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer pattern formed on the substrate and including a first capacitor electrode; a gate insulating layer covering the semiconductor layer pattern; a first conductive layer pattern formed on the gate insulating layer and including a second capacitor electrode having at least a portion overlapping the first capacitor electrode; an interlayer insulating layer having a capacitor opening exposing a portion of the second capacitor electrode and covering the second capacitor electrode; and a second conductive layer pattern formed on the interlayer insulating layer, wherein the capacitor opening includes a first transverse side wall parallel to and overlapping the second capacitor electrode, a second transverse side wall parallel to and not overlapping the second capacitor electrode, and a longitudinal side wall connecting the first transverse side wall an