Patents by Inventor Yul LEE

Yul LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating semiconductor device
    Patent number: 11728429
    Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: August 15, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yul Lee, Yuri Masuoka
  • METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20220102555
    Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.
    Type: Application
    Filed: December 14, 2021
    Publication date: March 31, 2022
    Inventors: Yul LEE, Yuri MASUOKA
  • Semiconductor device and method of fabricating the same
    Patent number: 11222978
    Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: January 11, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yul Lee, Yuri Masuoka
  • SEMICONDUCTOR DEVICE
    Publication number: 20190295886
    Abstract: A semiconductor device including an active pattern on a substrate; a gate structure crossing the active pattern; a source/drain pattern on the active pattern at a side of the gate structure; a contact plug on the source/drain pattern; and a conductive pattern between the source/drain pattern and the contact plug, wherein the source/drain pattern includes a barrier layer adjacent to the conductive pattern, and wherein the barrier layer includes an oxygen atom.
    Type: Application
    Filed: January 3, 2019
    Publication date: September 26, 2019
    Inventors: Byungha CHOI, Yuri MASUOKA, Yul LEE
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20190280123
    Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.
    Type: Application
    Filed: June 27, 2018
    Publication date: September 12, 2019
    Inventors: Yul LEE, Yuri MASUOKA