Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same, and relates to the field of semiconductor technologies. The manufacturing method includes: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region.

Abstract: A method for preparing a semiconductor device, including providing a substrate, where a word line structure is formed in the substrate; a bit line supporting layer includes a first oxide layer and a first nitride layer. A bit line structure is formed in the first nitride layer, and the first oxide layer is formed on both sides of the bit line structure and located in the first nitride layer; patterning the supporting structure to form a first via corresponding to the bit line structure; and etching the bit line supporting layer to a preset height along the first via, adjusting an etching parameter and a selective etching ratio of etching gas for an oxide layer to a nitride layer, and continuing to etch the bit line supporting layer until the bit line structure is exposed, to form a polymer layer above the bit line structure.

Abstract: In the method for manufacturing a semiconductor structure, a film structure is formed on a substrate, a pattern transfer layer is formed on the film structure, a plurality of holes are defined on the pattern transfer layer, and the pattern transfer layer is flattened; the film structure is etched through the holes to form capacitor holes in the film structure.

Abstract: The present disclosure provides a method for detecting etching defects of an etching equipment, belonging to the field of semiconductor manufacturing technology. The method includes: providing a test wafer, the test wafer including a substrate, a first dielectric layer and a second dielectric layer, the first dielectric layer and the second dielectric layer being sequentially formed on a top surface of the substrate, and capacitor contact structures being disposed in the substrate; transferring the test wafer to the etching equipment to be detected, and etching part of the second dielectric layer and part of the first dielectric layer to form capacitor holes; removing the second dielectric layer to form a measured wafer; transferring the measured wafer to a defect detection equipment and detecting the shapes of the capacitor holes of the measured wafer.

Abstract: A method for preparing a semiconductor device, including providing a substrate, where a word line structure is formed in the substrate; a bit line supporting layer includes a first oxide layer and a first nitride layer. A bit line structure is formed in the first nitride layer, and the first oxide layer is formed on both sides of the bit line structure and located in the first nitride layer; patterning the supporting structure to form a first via corresponding to the bit line structure; and etching the bit line supporting layer to a preset height along the first via, adjusting an etching parameter and a selective etching ratio of etching gas for an oxide layer to a nitride layer, and continuing to etch the bit line supporting layer until the bit line structure is exposed, to form a polymer layer above the bit line structure.

Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same, and relates to the field of semiconductor technologies. The manufacturing method includes: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region.

Abstract: This invention provides method and apparatus for quality evaluation of digital image to be used in the field of communication. The invention is used to tackle with the problem caused by the differences between the representation space of the digital image and the observation space. The digital image quality evaluation method calculates the objective quality of the digital image reflected in the observation space, while the calculation part is completed in the space to be evaluated. The digital image quality evaluation apparatus includes a distortion value generation module, a distortion value processing module, and a digital image quality evaluation module. The invention can provide a more accurate and fast objective quality calculation method in the observation space for the digital image in the space to be evaluated.