Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: A method of detecting a calcification in a bounding box enclosing a portion of a medical image, including the steps of obtaining the medical image in digital form, filtering at least image data in the bounding box using a difference of Gaussians (DOG) filter, and thresholding the filtered image data to detect, as one or more calcifications, portions of the filtered image data which exceed a threshold. The detected calcification may be classified by segmenting the one or more detected calcifications, extracting at least one feature from the one or more segmented calcifications, and determining a likelihood of malignancy of the one or more detected calcifications.

Abstract: A computer-aided method for detecting, classifying, and displaying candidate abnormalities, such as microcalcifications and interstitial lung disease in digitized medical images, such as mammograms and chest radiographs, a computer programmed to implement the method, and a data structure for storing required parameters, wherein in the classifying method candidate abnormalities in a digitized medical image are located, regions are generated around one or more of the located candidate abnormalities, features are extracted from at least one of the located candidate abnormalities within the region and from the region itself, the extracted features are applied to a classification technique, such as an artificial neural network (ANN) to produce a classification result (i.e., probability of malignancy in the form of a number and a bar graph), and the classification result is displayed along with the digitized medical image annotated with the region and the candidate abnormalities within the region.