Abstract: Provided are transaminase mutants and uses thereof. The transaminase mutant is obtained by one or more amino acid mutations occurring in SEQ ID NO: 2 or is a mutant with a conserved amino acid mutation obtained by taking the sequence SEQ ID NO: 1 of a wild-type CvTA transaminase as a reference. Compared with wild-type transaminases, the catalytic activity of the mutant is improved to different degrees, so that the production efficiency of chiral amine compound synthesis may be improved.

Abstract: Provided is a method for synthesizing a chiral amine compound. A transaminase is used to transaminate a ketone substrate under the action of an amino donor, to obtain the chiral amine compound; and the conserved amino acid sequence region of the transaminase at least includes a region 1 (MAGLWCVN) and a region 2 (YNTFFKT). With the transaminase with the specific conserved amino acid sequence region to synthesize a large sterically hindered chiral amine, the enzyme catalytic reaction volume is small, the synthesizing route is short, the product yield is high, a high-cost noble metal is not required for catalysis under the synthesizing conditions, three wastes are reduced, and the production cost is saved.

Abstract: Disclosed techniques for applying a neural network deep learning model in a fabrication strategy for high-mix semiconductor manufacturing, such as deposition, chemical-mechanical polishing (CMP), etching, photolithography, plating, etc. Training and normal operation modes of the fabrication strategy are described.

Abstract: A system and method of forming a sapphire component. The method may include disposing an absorptive-barrier layer on a first surface of a sapphire substrate, performing a cut in the sapphire substrate using a laser beam incident on the absorptive-barrier layer, and forming and removing molten sapphire from the cut. The method may also include shielding a region of the first surface that is adjacent to the cut from the molten sapphire using the absorptive-barrier layer, and removing the absorptive-barrier layer from the first surface of the sapphire substrate.

Abstract: A ceramic material, such as sapphire, is irradiated using a laser-based process to form a cut. In some implementations, a region of the ceramic material adjacent to the cut may be heated. The region may be removed to form an edge feature. In various implementations, the region of the ceramic material adjacent to the cut may be shielded from an outer portion of a laser beam used in the laser-based process using a shield, such as a polyethylene film. This removal and/or shielding operations may improve the mechanical strength of the ceramic material.

Abstract: A ceramic material, such as sapphire, is irradiated using a laser-based process to form a cut. In some implementations, a region of the ceramic material adjacent to the cut may be heated. The region may be removed to form an edge feature. In various implementations, the region of the ceramic material adjacent to the cut may be shielded from an outer portion of a laser beam used in the laser-based process using a shield, such as a polyethylene film. This removal and/or shielding operations may improve the mechanical strength of the ceramic material.

Abstract: A system and method of forming a sapphire component. The method may include disposing an absorptive-barrier layer on a first surface of a sapphire substrate, performing a cut in the sapphire substrate using a laser beam incident on the absorptive-barrier layer, and forming and removing molten sapphire from the cut. The method may also include shielding a region of the first surface that is adjacent to the cut from the molten sapphire using the absorptive-barrier layer, and removing the absorptive-barrier layer from the first surface of the sapphire substrate.