Patents by Inventor Yulei YAN

Yulei YAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11899227
    Abstract: The present disclosure provides a solar reflecting film and a preparation method thereof. The solar reflecting film includes a substrate and a functional layer stacked on each other. The functional layer includes a first reflecting layer, a barrier layer, and a second reflecting layer stacked on the substrate in order. The barrier layer includes a first barrier layer and a second barrier layer stacked on the first barrier layer. The first barrier layer is metal fluoride, inorganic non-metallic oxide, metal oxide or a combination thereof. The second barrier layer is metal oxides, metal nitrides, semiconductor doped compounds or a combination thereof. And a material of the first barrier layer is at least partially different from that of the second barrier layer.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: February 13, 2024
    Assignees: NINGBO RADI-COOL ADVANCED ENERGY TECHNOLOGIES CO., LTD., NINGBO RUILING ADVANCED ENERGY MATERIALS INSTITUTE CO., LTD.
    Inventors: Ronggui Yang, Shaoyu Xu, Minghui Wang, Huailun Zhai, Yulei Yan, Zhengjie Yin, Jinling Zhao
  • Publication number: 20230161085
    Abstract: The present disclosure provides a solar reflecting film and a preparation method thereof. The solar reflecting film includes a substrate and a functional layer stacked on each other. The functional layer includes a first reflecting layer, a barrier layer, and a second reflecting layer stacked on the substrate in order. The barrier layer includes a first barrier layer and a second barrier layer stacked on the first barrier layer. The first barrier layer is metal fluoride, inorganic non-metallic oxide, metal oxide or a combination thereof. The second barrier layer is metal oxides, metal nitrides, semiconductor doped compounds or a combination thereof. And a material of the first barrier layer is at least partially different from that of the second barrier layer.
    Type: Application
    Filed: April 10, 2020
    Publication date: May 25, 2023
    Inventors: Ronggui YANG, Shaoyu XU, Minghui WANG, Huailun ZHAI, Yulei YAN, Zhengjie YIN, Jinling ZHAO