Patents by Inventor Yulhwa KIM

Yulhwa KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230362498
    Abstract: An electronic system may include: a camera to capture a current image; an image processor to generate current image data items; and a splitter circuit to generate first and second images having respective first and second image data items. The splitter circuit splits each current image data item into a first image data item with a first set of bits and a second image data item with a second set of bits distinct from the first set of bits. The first and second image data items correspond to two distinct precisions less than a precision of the current image data items. The electronic system may also include distinct binary neural network circuits to independently process the first and second images to generate first and second processed image data items; and a merger circuit to combine the processed image data items to recover output image data items for display.
    Type: Application
    Filed: July 17, 2023
    Publication date: November 9, 2023
    Applicant: Postech Research and Business Development Foundation
    Inventors: Hyungjun KIM, Yulhwa KIM, Sungju RYU, Jae-Joon KIM
  • Patent number: 11790985
    Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: October 17, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jinseok Kim, Yulhwa Kim, Jae-Joon Kim, Hyungjun Kim
  • Patent number: 11755897
    Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.
    Type: Grant
    Filed: January 7, 2023
    Date of Patent: September 12, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Joon Kim, Hyungjun Kim, Yulhwa Kim
  • Publication number: 20230260568
    Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
    Type: Application
    Filed: April 19, 2023
    Publication date: August 17, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
  • Patent number: 11681899
    Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: June 20, 2023
    Assignees: Samsong Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Sungho Kim, Yulhwa Kim, Hyungjun Kim, Jae-Joon Kim, Jinseok Kim
  • Publication number: 20230153594
    Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.
    Type: Application
    Filed: January 7, 2023
    Publication date: May 18, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Joon KIM, Hyungjun KIM, Yulhwa KIM
  • Patent number: 11580368
    Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: February 14, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Joon Kim, Hyungjun Kim, Yulhwa Kim
  • Patent number: 11521046
    Abstract: A method of performing operations on a plurality of inputs and a same kernel using a delay time by using a same processor, and a neural network device thereof are provided, the neural network device includes input data including a first input and a second input, and a processor configured to obtain a first result by performing operations between the first input and a plurality of kernels, to obtain a second result by performing operations between the second input, which is received at a time delayed by a first interval from a time when the first input is received, and the plurality of kernels, and to obtain output data using the first result and the second result. The neural network device may include neuromorphic hardware and may perform convolutional neural network (CNN) mapping.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: December 6, 2022
    Assignees: Samsung Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Sungho Kim, Jinseok Kim, Yulhwa Kim, Jaejoon Kim, Dusik Park, Hyungjun Kim
  • Publication number: 20220246204
    Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
    Type: Application
    Filed: April 18, 2022
    Publication date: August 4, 2022
    Applicant: Postech Research and Business Development Foundation
    Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
  • Patent number: 11335399
    Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: May 17, 2022
    Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Jinseok Kim, Yulhwa Kim, Jae-Joon Kim, Hyungjun Kim
  • Publication number: 20210074349
    Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.
    Type: Application
    Filed: September 3, 2020
    Publication date: March 11, 2021
    Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
  • Publication number: 20210027142
    Abstract: Disclosed is a method of operating a neural network system. The method includes splitting input feature data into first splitting data corresponding to a first digit bit and second splitting data corresponding to a second digit bit different from the first digit bit, propagating the first splitting data through a first binary neural network, propagating the second splitting data through a second binary neural network, and merging first result data by propagation of the first splitting data and second result data by propagating the second splitting data to generate output feature data.
    Type: Application
    Filed: July 20, 2020
    Publication date: January 28, 2021
    Inventors: Hyungjun KIM, Yulhwa KIM, Sungju RYU, Jae-Joon KIM
  • Publication number: 20200184315
    Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.
    Type: Application
    Filed: September 5, 2019
    Publication date: June 11, 2020
    Applicants: Samsung Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Sungho KIM, Yulhwa KIM, Hyungjun KIM, Jae-Joon KIM, Jinseok KIM
  • Publication number: 20200160160
    Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.
    Type: Application
    Filed: November 18, 2019
    Publication date: May 21, 2020
    Inventors: Jae-Joon KIM, Hyungjun KIM, Yulhwa KIM
  • Publication number: 20190138892
    Abstract: A method of performing operations on a plurality of inputs and a same kernel using a delay time by using a same processor, and a neural network device thereof are provided, the neural network device includes input data including a first input and a second input, and a processor configured to obtain a first result by performing operations between the first input and a plurality of kernels, to obtain a second result by performing operations between the second input, which is received at a time delayed by a first interval from a time when the first input is received, and the plurality of kernels, and to obtain output data using the first result and the second result. The neural network device may include neuromorphic hardware and may perform convolutional neural network (CNN) mapping.
    Type: Application
    Filed: October 25, 2018
    Publication date: May 9, 2019
    Applicants: Samsung Electronics Co., Ltd., Postech Academy-Industry Foundation
    Inventors: Sungho KIM, Jinseok KIM, Yulhwa KIM, Jaejoon KIM, Dusik PARK