Patents by Inventor Yulhwa KIM
Yulhwa KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250014638Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: ApplicationFiled: September 20, 2024Publication date: January 9, 2025Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
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Patent number: 12125524Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: GrantFiled: April 19, 2023Date of Patent: October 22, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jinseok Kim, Yulhwa Kim, Jae-Joon Kim, Hyungjun Kim
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Publication number: 20230362498Abstract: An electronic system may include: a camera to capture a current image; an image processor to generate current image data items; and a splitter circuit to generate first and second images having respective first and second image data items. The splitter circuit splits each current image data item into a first image data item with a first set of bits and a second image data item with a second set of bits distinct from the first set of bits. The first and second image data items correspond to two distinct precisions less than a precision of the current image data items. The electronic system may also include distinct binary neural network circuits to independently process the first and second images to generate first and second processed image data items; and a merger circuit to combine the processed image data items to recover output image data items for display.Type: ApplicationFiled: July 17, 2023Publication date: November 9, 2023Applicant: Postech Research and Business Development FoundationInventors: Hyungjun KIM, Yulhwa KIM, Sungju RYU, Jae-Joon KIM
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Patent number: 11790985Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: GrantFiled: April 18, 2022Date of Patent: October 17, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jinseok Kim, Yulhwa Kim, Jae-Joon Kim, Hyungjun Kim
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Patent number: 11755897Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.Type: GrantFiled: January 7, 2023Date of Patent: September 12, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Joon Kim, Hyungjun Kim, Yulhwa Kim
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Publication number: 20230260568Abstract: Disclosed are a first memory cell, a second memory cell, and a summing circuit. The first memory cell outputs only one of a first voltage through a first bit line and a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs only one of a third voltage through the first bit line and a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight; and the summing circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: ApplicationFiled: April 19, 2023Publication date: August 17, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
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Patent number: 11681899Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.Type: GrantFiled: September 5, 2019Date of Patent: June 20, 2023Assignees: Samsong Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Sungho Kim, Yulhwa Kim, Hyungjun Kim, Jae-Joon Kim, Jinseok Kim
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Publication number: 20230153594Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.Type: ApplicationFiled: January 7, 2023Publication date: May 18, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Joon KIM, Hyungjun KIM, Yulhwa KIM
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Patent number: 11580368Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.Type: GrantFiled: November 18, 2019Date of Patent: February 14, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Joon Kim, Hyungjun Kim, Yulhwa Kim
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Patent number: 11521046Abstract: A method of performing operations on a plurality of inputs and a same kernel using a delay time by using a same processor, and a neural network device thereof are provided, the neural network device includes input data including a first input and a second input, and a processor configured to obtain a first result by performing operations between the first input and a plurality of kernels, to obtain a second result by performing operations between the second input, which is received at a time delayed by a first interval from a time when the first input is received, and the plurality of kernels, and to obtain output data using the first result and the second result. The neural network device may include neuromorphic hardware and may perform convolutional neural network (CNN) mapping.Type: GrantFiled: October 25, 2018Date of Patent: December 6, 2022Assignees: Samsung Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Sungho Kim, Jinseok Kim, Yulhwa Kim, Jaejoon Kim, Dusik Park, Hyungjun Kim
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Publication number: 20220246204Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: ApplicationFiled: April 18, 2022Publication date: August 4, 2022Applicant: Postech Research and Business Development FoundationInventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
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Patent number: 11335399Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: GrantFiled: September 3, 2020Date of Patent: May 17, 2022Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATIONInventors: Jinseok Kim, Yulhwa Kim, Jae-Joon Kim, Hyungjun Kim
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Publication number: 20210074349Abstract: Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.Type: ApplicationFiled: September 3, 2020Publication date: March 11, 2021Inventors: Jinseok KIM, Yulhwa KIM, Jae-Joon KIM, Hyungjun KIM
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Publication number: 20210027142Abstract: Disclosed is a method of operating a neural network system. The method includes splitting input feature data into first splitting data corresponding to a first digit bit and second splitting data corresponding to a second digit bit different from the first digit bit, propagating the first splitting data through a first binary neural network, propagating the second splitting data through a second binary neural network, and merging first result data by propagation of the first splitting data and second result data by propagating the second splitting data to generate output feature data.Type: ApplicationFiled: July 20, 2020Publication date: January 28, 2021Inventors: Hyungjun KIM, Yulhwa KIM, Sungju RYU, Jae-Joon KIM
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Publication number: 20200184315Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.Type: ApplicationFiled: September 5, 2019Publication date: June 11, 2020Applicants: Samsung Electronics Co., Ltd., POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Sungho KIM, Yulhwa KIM, Hyungjun KIM, Jae-Joon KIM, Jinseok KIM
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Publication number: 20200160160Abstract: Provided is an artificial neural network circuit including unit weight memory cells including weight memory devices configured to store weight data and weight pass transistors, unit threshold memory cells including a threshold memory device programmed to store a threshold and a threshold pass transistor, a weight-threshold column in which the plurality of unit weight memory cells and the plurality of unit threshold memory cells are connected, and a sense amplifier configured to receive an output signal of the weight-threshold column as an input and receive a reference voltage as another input.Type: ApplicationFiled: November 18, 2019Publication date: May 21, 2020Inventors: Jae-Joon KIM, Hyungjun KIM, Yulhwa KIM
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Publication number: 20190138892Abstract: A method of performing operations on a plurality of inputs and a same kernel using a delay time by using a same processor, and a neural network device thereof are provided, the neural network device includes input data including a first input and a second input, and a processor configured to obtain a first result by performing operations between the first input and a plurality of kernels, to obtain a second result by performing operations between the second input, which is received at a time delayed by a first interval from a time when the first input is received, and the plurality of kernels, and to obtain output data using the first result and the second result. The neural network device may include neuromorphic hardware and may perform convolutional neural network (CNN) mapping.Type: ApplicationFiled: October 25, 2018Publication date: May 9, 2019Applicants: Samsung Electronics Co., Ltd., Postech Academy-Industry FoundationInventors: Sungho KIM, Jinseok KIM, Yulhwa KIM, Jaejoon KIM, Dusik PARK