Patents by Inventor Yuli Chakk

Yuli Chakk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming porous diamond films for semiconductor applications
    Patent number: 8124509
    Abstract: The porosity of a diamond film may be increased and its dielectric constant lowered by exposing a film containing sp3 hybridization to ion implantation. The implantation produces a greater concentration of sp2 hybridizations. The sp2 hybridizations may then be selectively etched, for example, using atomic hydrogen plasma to increase the porosity of the film. A series of layers may be deposited and successively treated in the same fashion to build up a composite, porous diamond film.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: February 28, 2012
    Assignee: Intel Corporation
    Inventors: Kramadhati V. Ravi, Yuli Chakk
  • Forming porous diamond films for semiconductor applications
    Publication number: 20050277303
    Abstract: The porosity of a diamond film may be increased and its dielectric constant lowered by exposing a film containing sp3 hybridization to ion implantation. The implantation produces a greater concentration of sp2 hybridizations. The sp2 hybridizations may then be selectively etched, for example, using atomic hydrogen plasma to increase the porosity of the film. A series of layers may be deposited and successively treated in the same fashion to build up a composite, porous diamond film.
    Type: Application
    Filed: May 28, 2004
    Publication date: December 15, 2005
    Inventors: Kramadhati Ravi, Yuli Chakk