Patents by Inventor Yuli Lyanda-Geller

Yuli Lyanda-Geller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Enhancement mode single electron transistor
    Patent number: 7208753
    Abstract: A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: April 24, 2007
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Ming Yang, Chia-Hung Yang, Yuli Lyanda-Geller
  • ENHANCEMENT MODE SINGLE ELECTRON TRANSISTOR
    Publication number: 20070063182
    Abstract: A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.
    Type: Application
    Filed: February 24, 2006
    Publication date: March 22, 2007
    Applicant: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
    Inventors: Ming Yang, Chia-Hung Yang, Yuli Lyanda-Geller