Patents by Inventor Yulia Kotsar

Yulia Kotsar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9570441
    Abstract: A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.
    Type: Grant
    Filed: June 22, 2015
    Date of Patent: February 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Yulia Kotsar, Sven Lanzerstorfer, Robert Zink
  • Publication number: 20150380403
    Abstract: A first trench and a second trench, both extending from a main surface into a semiconductor layer, are filled with a first fill material. The first fill material is selectively recessed in the first trench. A mask is formed that covers the second trench and that exposes the first trench. An oxidation rate promoting material is implanted into an exposed first section of the recessed fill material in the first trench. The mask is removed. Then the first fill material is thermally oxidized, wherein on the first section an oxidation rate is at least twice as high as on non-implanted sections of the first fill material.
    Type: Application
    Filed: June 22, 2015
    Publication date: December 31, 2015
    Inventors: Yulia Kotsar, Sven Lanzerstorfer, Robert Zink