Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: In a file sharing system, a key manager unit realizes a correspondence between the first user identifier and the first public key in response to a registration request of the first user, generates a first key material for encrypting the first file into a first encrypted file, and generates a first credential according to the first user identifier, the first file identifier, the first public key and the first key material after receiving an access-right claim request to the first file from the first user. A file storage unit stores the first encrypted file and the first credential. The first user uses the first user identifier, the first file identifier and the first private key to retrieve the first key material out of the first credential, and uses the first key material to decrypt the first encrypted file into the first file.

Abstract: This disclosure relates to techniques for a wireless device to perform millimeter wavelength communication with increased reliability and power efficiency using sensor inputs. The sensor inputs may include motion, rotation, or temperature measurements, among various possibilities. The sensor inputs may be used when performing beamforming tracking, antenna configuration, transmit and receive chain measurements and selection, and/or in any of various other possible operations.

Abstract: A method of measuring chromaticity of a target object is implemented using a computer device that stores a plurality of light source spectrum datasets each associated with a specific object. The method includes: obtaining a captured color image of the target object; generating a spectral image based on the captured color image using a spectral transformation matrix; obtaining one of the plurality of light source spectrum datasets that is associated with the target object; and calculating a chromaticity dataset of the target object based on the spectral image and the one of the plurality of light source spectrum datasets.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A method of building upstream-and-downstream configuration of sensors includes determining two sets of geographic position data of a target sensor and a candidate sensor, obtaining pollution-associated periods according to pieces of flow field data, the sets of geographic position data and pieces of target sensing data of the target sensor to determine a pollution-associated period, calculating a correlation between target sensing data obtained by the target sensor during the pollution-associated period and candidate sensing data obtained by the candidate sensor during the associated air pollution period to obtain sensor correlations, and determining the target sensor and the candidate sensor having a upstream-and-downstream relationship with the candidate sensor being used as a satellite sensor of the target sensor when a quantity ratio of sensor correlations being larger than or equal to a correlation threshold is larger than or equal to a default ratio.

Abstract: A sensing cell includes: a first electrode coupled to a gate of a transistor, a second electrode spaced apart from the first electrode; a protective layer covering sidewalls of the first electrode and the second electrode and having a first opening and a second opening exposing a first part of the first electrode and a second part of the second electrode, respectively; a first well located on the protective layer and surrounding the first electrode and the second electrode and having a third opening exposing the first part of the first electrode, the second part of the second electrode, and the protective layer between the first opening and the second opening; a second well located on the protective layer surrounding the first well and having a fourth opening to limit a flow of a liquid to be tested; and an ion selective membrane located in the third opening.

Abstract: Provided is a coronavirus detection method which is suitable for a coronavirus disease 2019 (COVID-19) detection. The method includes the following steps. A field-effect transistor-based biosensor (BioFET) platform is provided, wherein the BioFET platform includes a BioFET and a sensor card. The sensor card is detachably connected to the BioFET, wherein the sensor card includes a plurality of sensors and each of the plurality of sensors includes a response electrode. A nucleic acid probe specific to a nucleic acid sequence of COVID-19 virus is immobilized on a surface of the response electrode. A test solution is placed on the response electrode of the sensor card. A pulse voltage is applied to the response electrode, and a detection current generated from the sensor card is measured.

Abstract: A sensing device is provided. The sensing device includes a transistor, a disposable electrode, and a remote electrode. The transistor includes an extended gate, source and drain. The remote electrode is configured to receive a reference voltage. The disposable electrode is coupled between the transistor and the remote electrode. The disposable electrode includes a proximal end and a distal end. The proximal end of the disposable electrode is coupled to the extended gate of the transistor. The distal end of the disposable electrode is coupled to the remote electrode. The disposable electrode is adapted to load a cell and receive a membrane potential of the cell. The disposable electrode provides a gate voltage to the extended gate based on the change of the membrane potential and the reference voltage. The transistor provides different transistor currents at the drain based on the change of the gate voltage.

Abstract: A fluid quality tracing method includes obtaining pieces of fluid concentration distribution data of a detected region corresponding to detection time points respectively, generating pieces of concentration grid data respectively according to the pieces of fluid concentration distribution data, obtaining pieces of fluid moving data of the detected region corresponding to the detection time points respectively, obtaining estimated positions according to the fluid moving data and an initial position, and creating a fluid concentration trajectory according to the pieces of concentration grid data, the initial position and the estimated positions. The initial position and the estimated positions are located in the detected region. The fluid concentration trajectory includes line segments with terminals corresponding to the initial position and the estimated positions respectively, and the line segments indicate concentration representative values respectively.

Abstract: A driving circuit film configured to be bond at a periphery region of a display panel. The driving circuit film includes a flexible substrate, a gate driving circuit and a source driver. The gate driving circuit is disposed on the flexible substrate, and the gate driving circuit includes a Thin-Film Transistor. The source driver is disposed on the flexible substrate.

Abstract: An electronic device includes a substrate, a first wiring layer, an oxide insulating layer and a nitride insulating layer. The first wiring layer is disposed on the substrate and includes an outer metal layer. The outer metal layer contains at least 97 wt % molybdenum. The oxide insulating layer is disposed on the first wiring layer and touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the thickness difference between the thickness of the oxide insulating layer and the thickness of the nitride insulating layer is greater than or equal to 250 nm.

Abstract: An electronic device includes a substrate, a wiring structure, an oxide insulating layer and a nitride insulating layer. The wiring structure is disposed on the substrate and includes an outer metal layer and an inner metal layer. The outer metal layer contains no molybdenum. The inner metal layer disposed between the outer metal layer and the substrate contains molybdenum. The oxide insulating layer is disposed on the wiring structure and directly touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer.

Abstract: A sensing cell includes: a first electrode coupled to a gate of a transistor, a second electrode spaced apart from the first electrode; a protective layer covering sidewalls of the first electrode and the second electrode and having a first opening and a second opening exposing a first part of the first electrode and a second part of the second electrode, respectively; a first well located on the protective layer and surrounding the first electrode and the second electrode and having a third opening exposing the first part of the first electrode, the second part of the second electrode, and the protective layer between the first opening and the second opening; a second well located on the protective layer surrounding the first well and having a fourth opening to limit a flow of a liquid to be tested; and an ion selective membrane located in the third opening.

Abstract: A sensing device including a transistor, at least one response electrode, and a selective membrane is provided. The transistor includes a gate end, a source end, a drain end, and a semiconductor layer, wherein the source end and the drain end are located on the semiconductor layer, and the gate end is located between the source end and the drain end. The at least one response electrode is disposed opposite to the gate end of the transistor and spaced apart from the transistor. The selective membrane is located on the at least one response electrode or on the transistor.