Abstract: A method of cleaning wafer surfaces after polishing aluminum wirings by means of a polishing disc in ultra large scale integrated circuits, the method including: a) mixing and stirring deionized water, between 0.5 and 5 wt. % of a surfactant, between 0.1 and 5 wt. % of an FA/O II chelating agent, and between 0.01 and 5 wt. % of an FA/O II corrosion inhibitor, to yield a neutral aqueous cleaning solution; and b) after a chemical-mechanical polishing treatment for aluminum wirings, directly washing wafer surfaces with the neutral aqueous cleaning solution without lifting the polishing disc.

Abstract: A method of preventing oxidation of multilayer wirings in ultra large scale integrated circuits after alkaline polishing, the method including: a) mixing between 0.5 and 1 wt. % of a surfactant, between 0.05 and 0.5 wt. % of a chelating agent, between 1 and 10 wt. % of a corrosion inhibitor, and deionized water, and stirring to yield a water soluble antioxidant solution with pH value of between 6.8 and 7.5; and b) washing the multilayer wirings in the ultra large scale integrated circuits using the antioxidant solution after alkaline CMP under following conditions: between 1000 and 2000 Pa pressure; between 2000 and 5000 mL/min flow rate; and at least between 0.5 and 1 min washing time.

Abstract: A method of polishing copper wiring surfaces of in ultra large scale integrated circuit, the method including: a) preparing a polishing solution including between 35 and 80 w. % of a nano SiO2 abrasive, between 12 and 60 w. % of deionized water, between 1 and 3 w. % of an oxidant, between 1 and 4 w. % of an active agent, and between 0.5 and 1.5 w. % of a chelating agent; and b) polishing using the polishing solution under following conditions: between 2 and 5 kPa pressure; between 20 and 50° C.; between 120 and 250 mL/min slurry flow rate; and at between 30 and 60 rpm/min rotational speed.

Abstract: A submicron emulsion of paclitaxel, the preparation method and the use thereof are disclosed. Said paclitaxel submicron emulsion comprises paclitaxel/steroid complex, oil for injection, water for injection, emulsifier, assistant emulsifier and isotonic agent, wherein the mole ratio of paclitaxel to steroid in the complex is 1:0.2˜4; preferably 1:0.25˜2. Said submicron emulsion is useful for the treatment for malignant tumor. The average particle diameter of the submicron emulsion is less than 400 nm and the pH Value is 3.5-6.

Abstract: The present invention relates to an effective fraction of alkaloids and the effective fraction is prepared from mulberry twig and its active ingredients are a composition of alkaloids. Determined by HPLC, the percentage of the total alkaloids are 50% or more by weight in the effective fraction and the percentage of the compound 1-deoxynojirimycin is 30% or more by weight in the total alkaloids. The effective fraction of the invention is prepared as the following steps: the mulberry twig is extracted by solvents, and the extract is precipitated by alcohol precipitation or flocculation to remove the impurities, and then concentrated, purified by resin chromatography. The present invention also relates to a pharmaceutical composition containing the said effective fraction of alkaloids and to the use of the effective fraction of alkaloids according to claim 1-4 in preparing hypoglycemic agents.

Abstract: Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 ?m/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate.

Abstract: Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.

Abstract: This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.

Abstract: Provided is a method of chemical-mechanical planarization of copper multilayer interconnection structures and of controlling the dishing problem associated therewith comprising: (a) preparing a slurry by (i) diluting SiO2 hydrosol with deionized water; (ii) admixing a chelating agent and adjusting the pH to between 9.5 to 11.5; and (iii) admixing nonionic surfactant(s) and oxidant(s); (b) applying said slurry to said copper multilayer interconnection structures; and (c) polishing said copper multilayer interconnection structures with polishing pad(s). The flow speed is 200-5000 ml/min, the temperature is 20-40° C., the rotation speed is 60-120 rpm, the pressure is 100-250 g/cm2, and the polishing speed can be 200-1100 nm/min. The process involves 1-5 min for polishing the copper and then 30-60 sec for polishing the copper, the barrier layer, and the dielectric layer.

Abstract: This invention provides a method for eliminating the surface stress of a silicon wafer comprising forming one or more anti-stress groove(s) on the surface of the silicon wafer. These anti-stress grooves can reduce or eliminate the surface stress of silicon wafer effectively to avoid the formation of slip lines and dislocation arrangements, which may induce the p-n junction to conduct or the leakage current to increase. The process is highly efficient and low in cost. It is simple to manage and does not require additional equipment beyond that already used for processing of silicon wafers.

Abstract: Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.

Abstract: Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 ?m/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate.

Abstract: The application provides, in part, vectors based on novel tobacco rattle virus replicons, as well as methods for using such vectors and transgenic plants.

Abstract: An isolated and/or purified Sdr surface protein from S. capitis and nucleic acids encoding them are provided which includes the SdrX protein which possesses collagen binding activites and the SdrZL protein which possesses SdrZ-like properties. The Sdr surface proteins from S. capitis can be used in pharmaceutical compositions to treat and prevent S. capitis infectionm and can also be used in vaccines and to raise antibodies which can treat or prevent such infections. Because the SdrX protein has been shown to have collagen binding abilities, antibodies to SdrX will have the ability to inhibit or prevent the ability of S. capitis to bind to collagen.

Abstract: A method for treating or preventing infections from yeast of the Candida species is provided wherein an immunoglobulin composition containing high titers of antibodies to staphylococcal adhesins ClfA and SdrG is administered in an amount effective to inhibit the growth and progression of Candidial infections. The compositions and methods of the present invention are advantageous in that they can be used to treat both staphylococcal and Candidial infections at the same time, and they are particularly effective in treating or preventing late-onset sepsis in neonates.

Abstract: The application provides, in part, vectors based on novel tobacco rattle virus replicons, as well as methods for using such vectors and transgenic plants.

Abstract: The present invention is directed to a cotton leaf curl virus (CLCUV) bi-directional promoter, a method of expressing a heterologous gene in various plant tissues at a high level using the cotton leaf curl virus bi-directional promoter, and an AC2 protein factor from CLCuV genome to improve the expression level of the coat protein-coding gene promoter in the bi-directional promoter. The expression of a heterologous gene in plants is improved by using the materials and methods of the present invention.

Abstract: The present invention relates to a method of obtaining local anesthesia and analgesia to the nerve tissue region of a mammal by administration of an effective dose of sodium channel blocking compounds, including tetrodotoxin and/or saxitoxin and derivatives thereof, in a pharmaceutically suitable vehicle.