Abstract: Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

Abstract: An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

Abstract: An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

Abstract: An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

Abstract: A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. ??/?>?n/n). In practice, this tuning range is >15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.

Abstract: A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. ??/?>?n/n). In practice, this tuning range is >15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.