Patents by Inventor Yuliya Anatolyevna Akulova

Yuliya Anatolyevna Akulova has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dopant diffusion barrier layer for use in III-V structures
    Patent number: 6819695
    Abstract: A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: November 16, 2004
    Assignee: TriQuint Technology Holding Co
    Inventors: Yuliya Anatolyevna Akulova, Michael Geva, Abdallah Ougazzaden
  • Laser with a resonant optical reflector
    Patent number: 6795472
    Abstract: A laser includes an optical cavity resonator having first and second reflectors and an active region interposed between the reflectors. The second reflector includes a resonant optical reflector having an optical gain medium.
    Type: Grant
    Filed: February 5, 2002
    Date of Patent: September 21, 2004
    Assignee: Lucent Technologies Inc.
    Inventors: Yuliya Anatolyevna Akulova, Rudolf Feodor Kazarinov
  • Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication
    Patent number: 6706542
    Abstract: The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.
    Type: Grant
    Filed: August 25, 2000
    Date of Patent: March 16, 2004
    Assignee: TriQuint Technology Holding Co.
    Inventors: Michael Geva, Yuliya Anatolyevna Akulova, Abdallah Ougazzaden
  • Double layer beam expander for device-to-fiber coupling
    Patent number: 6607933
    Abstract: A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.
    Type: Grant
    Filed: August 7, 2001
    Date of Patent: August 19, 2003
    Assignee: Agere Systems Optoelectronics Guardian Corp.
    Inventors: Yuliya Anatolyevna Akulova, Mindaugas Fernand Dautartas, Marlin Wilbert Focht, Kenneth Gerard Glogovsky, Abdallah Ougazzaden, Justin Larry Peticolas
  • Laser with a resonant optical reflector
    Publication number: 20030147441
    Abstract: A laser includes an optical cavity resonator having first and second reflectors and an active region interposed between the reflectors. The second reflector includes a resonant optical reflector having an optical gain medium.
    Type: Application
    Filed: February 5, 2002
    Publication date: August 7, 2003
    Inventors: Yuliya Anatolyevna Akulova, Rudolf Feodor Kazarinov
  • Double layer beam expander for device-to-fiber coupling
    Publication number: 20030031416
    Abstract: A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.
    Type: Application
    Filed: August 7, 2001
    Publication date: February 13, 2003
    Inventors: Yuliya Anatolyevna Akulova, Mindaugas Fernand Dautartas, Marlin Wilbert Focht, Kenneth Gerard Glogovsky, Abdallah Ougazzaden, Justin Larry Peticolas