Abstract: An audio data processing method comprises receiving at least one audio signal frame from an audio playing program, obtaining a first average power of the at least on audio signal frame, determining whether the first average power of the at least one audio signal frame is less than a first threshold and whether the audio playing program is in a background running mode, and in response to determining that the first average power of the at least one audio signal frame is less than the first threshold and the audio playing program is in the background running mode, triggering the audio playing program to pause playing.

Abstract: A vertical injection punchthrough based metal oxide semiconductor (VIPMOS) device and method of manufacturing the same, include a control gate, an erase gate, a floating gate, and an active area where the control gate, the erase gate, and the floating gate are coplanar and perpendicular to the active area.

Abstract: Using the characteristics of G-protein coupled receptors (GPCR) for sensing specific ligands and undergoing conformational change, inserting a signal molecule in an intracellular region of the G-protein coupled receptors, converting the conformational change of the G-protein coupled receptors into an optical signal change, and detecting the presence and/or concentration of a specific ligand by means of detecting the change in the optical signal; a GPCR activated fluorescent probe (GRAB probe) is constructed according to this principle. A method for using the GRAB probe to detect a specific ligand.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: Methods and systems of implementing a convolutional neural network are described. In an example, a structure may receive input signals and distribute the input signals to a plurality of unit cells. The structure may include a plurality of multi-kernel modules that may include a respective set of unit cells. A unit cell may correspond to an element of a kernel being implemented in the convolutional neural network and may include a storage component configured to store a weight of a corresponding element of the kernel. A first pass gate of the unit cell may be activated to pass a stored weight of the unit cell to a plurality of operation circuits in the corresponding unit cell, such that the stored weight may be applied to the input signals. The structure may generate a set of outputs based on the application of the stored weights to the input signals.

Abstract: A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.

Abstract: Systems and methods for a capacitor based resistive processing unit with symmetrical weight updating include a first capacitor that stores a charge corresponding to a weight value. A readout circuit reads the charge stored in the first capacitor to apply a weight to an input value corresponding to an input signal using the weight value to produce an output. An update circuit updates the weight value stored in the first capacitor, including a second capacitor in communication with the first capacitor to transfer an amount of charge to the first capacitor according to an error of the output by changing a voltage difference across the first capacitor by a voltage change corresponding to the amount of charge, the voltage difference corresponding to the charge stored in the first capacitor.

Abstract: A method for multiple copies of a set of multi-kernel set operations in a hardware accelerated neural network includes a word line for receiving a pixel value of an input image. A bit line communicates a modified pixel value. An analog memory cell including a first capacitor stores a first kernel weight of a first kernel in one of a plurality of kernel sets such that the pixel value is operated on by the first kernel weight to produce the modified pixel value. A charge connection connects the first capacitor to at least a second capacitor storing a second kernel weight of a related kernel of a second one of the plurality of kernel sets such that charge is shared between the first capacitor and at least the second capacitor to normalize the first kernel weight and the second kernel weight.

Abstract: A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: An electromagnetic induction type Hopkinson pressure/tension bar loading device and experiment method therefor. The device not only can generate compression stress waves but also can generate tension stress waves through the electromagnetic induction principle, and is applied to the loading of a Hopkinson tension bar and a pressure bar. Thus, the loading systems for a Hopkinson tension bar and a pressure bar can simultaneously achieve the strain rate and strain range, which the traditional split Hopkinson bar experiment cannot reach, on the same device, so that the Hopkinson bar experiment technology is standardized, and the experiment devices for a tension bar and a pressure bar are integrated, thereby reducing complexity and floor space of equipment.

Abstract: An audio data processing method comprises receiving at least one audio signal frame from an audio playing program, obtaining a first average power of the at least on audio signal frame, determining whether the first average power of the at least one audio signal frame is less than a first threshold and whether the audio playing program is in a background running mode, and in response to determining that the first average power of the at least one audio signal frame is less than the first threshold and the audio playing program is in the background running mode, triggering the audio playing program to pause playing.

Abstract: A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.

Abstract: Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having a controllable resistance. An example method for forming a semiconductor device includes forming a source terminal and a drain terminal of a field effect transistor (FET) on a substrate. The source terminal and the drain terminal are formed on either sides of a channel region. An energy barrier is formed adjacent to the source terminal and the channel region. A conductive gate is formed over the channel region.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having a controllable resistance. An example method for forming a semiconductor device includes forming a source terminal and a drain terminal of a field effect transistor (FET) on a substrate. The source terminal and the drain terminal are formed on either sides of a channel region. An energy barrier is formed adjacent to the source terminal and the channel region. A conductive gate is formed over the channel region.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: Technical solutions are described for storing weight in a crosspoint device of a resistive processing unit (RPU) array. An example method includes setting a state of each single bit counter from a set of single bit counters in the crosspoint device, the states of the single bit counters representing the weight to be stored at the crosspoint device. The method further includes adjusting electrical conductance of a resistor device of the crosspoint device. The resistor device includes a set of resistive circuits, each resistive circuit associated with a respective single bit counter from the set of single bit counters, the electrical conductance adjusted by activating or deactivating each resistive circuit according to a state of the associated single bit counter.

Abstract: A resistive processing unit includes a first analog memory element, a second analog memory element connected in series with the first analog memory element, and a control circuit coupled to the first analog memory element and the second analog memory element. The control circuit is configured to read a synaptic weight value of the resistive processing unit by collecting a differential current from the first analog memory element and the second analog memory element on at least one of a read column line and a read row line coupled to a terminal coupling the first analog memory element and the second analog memory element.