Patents by Inventor Yulu Chen
Yulu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240076412Abstract: An isolated anti-CD47 antibody or fragment thereof has the ability of binding CD47 and competing with the binding of SIRPa to CD47, and comprises a heavy chain variable region comprising heavy chain complementarity determining regions HCDR1, HCDR2, and HCDR3; and a light chain variable region comprising light chain complementarity determining regions LCDR1, LCDR2, and LCDR3. A method for treating a disorder in which CD47 is overexpressed or upregulated in a subject, comprises using an isolated anti-CD47 antibody or fragment thereof having the ability of binding CD47 and competing with the binding of SIRPa to CD47. A bispecific antibody comprises a first antigen binding moiety that binds to human GPC3 (hGPC3); and a second antigen binding moiety that binds to human CD47 (hCD47).Type: ApplicationFiled: January 5, 2022Publication date: March 7, 2024Inventors: Jianhua SUI, Kaixin DU, Wei CHEN, Yulu LI, Juan LIU
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Patent number: 10802393Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.Type: GrantFiled: October 16, 2017Date of Patent: October 13, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Lei Sun, Obert R. Wood, II, Genevieve Beique, Yulu Chen, Erik Verduijn, Francis Goodwin
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Patent number: 10564554Abstract: Embodiments of a method include: converting at least one image of a printed mask to a plurality of representative contours, each corresponding to mask patterns in the printed mask; determining whether the printed mask includes a printing defect based on whether the plurality of representative contours violates a set of contour tolerances for the printed mask; in response to at least one of plurality of representative contours violating at least one of the set of contour tolerances: identifying a location where a representative contour violates the at least one of the set of contour tolerances, and generating an instruction to adjust a layout for the printed mask, based on the violating of the at least one of the set of contour tolerances; and in response to none of the plurality of representative contours violating the set of contour tolerances, flagging a layout for the printed mask as compliant.Type: GrantFiled: January 18, 2018Date of Patent: February 18, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Liang Cao, Jed H. Rankin, Jie Zhang, Yulu Chen
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Patent number: 10468149Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.Type: GrantFiled: February 3, 2017Date of Patent: November 5, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Yulu Chen, Francis Goodwin, Jed Rankin, Lei Sun, Obert Reeves Wood, II
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Publication number: 20190258157Abstract: Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation.Type: ApplicationFiled: February 22, 2018Publication date: August 22, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Yulu Chen, Oktawian Sobieraj, SherJang Singh
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Publication number: 20190219933Abstract: Embodiments of a method include: converting at least one image of a printed mask to a plurality of representative contours, each corresponding to mask patterns in the printed mask; determining whether the printed mask includes a printing defect based on whether the plurality of representative contours violates a set of contour tolerances for the printed mask; in response to at least one of plurality of representative contours violating at least one of the set of contour tolerances: identifying a location where a representative contour violates the at least one of the set of contour tolerances, and generating an instruction to adjust a layout for the printed mask, based on the violating of the at least one of the set of contour tolerances; and in response to none of the plurality of representative contours violating the set of contour tolerances, flagging a layout for the printed mask as compliant.Type: ApplicationFiled: January 18, 2018Publication date: July 18, 2019Inventors: Liang Cao, Jed H. Rankin, Jie Zhang, Yulu Chen
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Patent number: 10332745Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.Type: GrantFiled: May 17, 2017Date of Patent: June 25, 2019Assignee: GLOBALFOUNDRIES Inc.Inventors: Lei Sun, Ruilong Xie, Wenhui Wang, Yulu Chen, Erik Verduijn, Zhengqing John Qi, Guoxiang Ning, Daniel J. Dechene
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Publication number: 20190113836Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.Type: ApplicationFiled: October 16, 2017Publication date: April 18, 2019Inventors: Lei SUN, Obert R. WOOD, II, Genevieve BEIQUE, Yulu CHEN, Erik VERDUIJN, Francis GOODWIN
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Publication number: 20190056651Abstract: A photomask includes a substrate having a top surface. A topographical feature is formed on the top surface of the substrate. The topographical feature may be a bump or a pit created on the top surface of the substrate. A reflector is formed on the top surface of the substrate over the topographical feature. The topographical feature warps the reflector in order to generate phase and/or amplitude gradients in light reflected off the reflector. An absorber is patterned on the reflector defining lithographic patterns for a resist material. The gradients in the light reflected off the reflector create shadow regions during lithography of the resist material using extreme ultraviolet (EUV) light.Type: ApplicationFiled: August 21, 2017Publication date: February 21, 2019Applicant: GLOBALFOUNDRIES INC.Inventors: Erik Verduijn, Yulu Chen, Lars Liebmann, Pawitter Mangat
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Publication number: 20180337045Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.Type: ApplicationFiled: May 17, 2017Publication date: November 22, 2018Inventors: Lei Sun, Ruilong Xie, Wenhui Wang, Yulu Chen, Erik Verduijn, Zhengqing John Qi, Guoxiang Ning, Daniel J. Dechene
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Publication number: 20180226166Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.Type: ApplicationFiled: February 3, 2017Publication date: August 9, 2018Inventors: Yulu Chen, Francis Goodwin, Jed Rankin, Lei Sun, Obert Reeves Wood, II
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Patent number: 9911604Abstract: Disclosed are methods of using a lithography-lithography-etch (LLE) technique to form a sidewall spacer pattern for patterning a target layer. In the methods, a photoresist layer is patterned by performing multiple lithographic processes with different photomasks, including a first photomask with a first pattern of parallel bars separated by spaces and a second photomask with a second pattern of opening(s) oriented in an essentially perpendicular direction as compared to the bar(s). The photoresist layer is then developed, creating a third pattern. The third pattern is transferred into a mandrel layer below to form mandrels of different lengths. Then, sidewall spacers are formed on the mandrels and the mandrels are selectively removed to form the sidewall spacer pattern. This sidewall spacer pattern is subsequently used in a sidewall image transfer (SIT) process to pattern a target layer below.Type: GrantFiled: January 24, 2017Date of Patent: March 6, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Lei Sun, Xunyuan Zhang, Ruilong Xie, Yulu Chen
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Patent number: 9484258Abstract: A method for producing self-aligned vias (SAV) is provided. Embodiments include forming a ILOS layer over a dielectric layer; forming pairs of spacers over the ILOS layer, each pair of spacers having a first filler formed between adjacent spacers, and a second filler formed between each pair of spacers; forming and patterning a first OPL to expose one second filler, spacers on opposite sides of the one second filler, and a portion of the first filler adjacent each of the exposed spacers; removing the one second filler to form a SAV, and SAV etching into the ILOS layer; forming a second OPL over the first OPL and in the SAV to form a SAV plug; removing OPL layers and etching into the ILOS layer down to the dielectric layer; forming a third OPL layer in spaces between the TEOS layer; and removing the SAV plug.Type: GrantFiled: March 16, 2016Date of Patent: November 1, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Ryan Ryoung-han Kim, Wenhui Wang, Lei Sun, Erik Verduijn, Yulu Chen
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Patent number: 9478462Abstract: Methods of forming a SAV using a selective SAQP or SADP process are provided. Embodiments include providing on a TiN layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler; removing a non-mandrel filler through a SAV patterning stack having an opening over the non-mandrel filler and adjacent spacers, forming a trench; removing a mandrel through a second SAV patterning stack having an opening over the mandrel and adjacent spacers, forming a second trench; etching the trenches through the TiN and dielectric layers; forming plugs in the trenches; removing the mandrels and non-mandrel fillers, forming third trenches; etching the third trenches through the TiN layer; removing the metal cut plug and spacers and etching the third trenches into the dielectric layer; removing the plugs; and filling the trenches with metal.Type: GrantFiled: March 16, 2016Date of Patent: October 25, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Wenhui Wang, Ryan Ryoung-han Kim, Lei Sun, Erik Verduijn, Yulu Chen