Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to promote the development and growth of cotton seedlings. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and, at seedling stage and early growth stage, applied to the soil around the cotton plants, and sprayed to the young plants. Optionally, the KHP solution can be diluted by water, as disclosed in the specification, before administering as taught herein.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to improve the efficacy of fertilizer usage and absorption by soybeans. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then infused to the fertilized soil in which the soybean seeds are grown, as well as the plants after the seed start sprouting. Optionally, the KHP solution can be diluted by water, as disclosed in the specification, for applying to the soil around the soybean.

Abstract: A method includes: forming a first mask over a substrate; forming first openings and a second opening in the first mask; forming first wells in first regions of the substrate exposed by the first openings and an alignment implant in a second region of the substrate exposed by the second opening; forming an alignment mark by recessing the alignment implant; and patterning a multi-layer semiconductor lattice under alignment of the alignment mark.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to enhance the healthy growth and production yield of wheat crops. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and, at early growth stage, applied to the leaf surface or infused into the soil around the crops. Optionally, the KHP solution can be diluted by water, as taught in the specification, before administering as taught herein.

Abstract: Present invention uses a mixture of feathers and water, and, depending on specific embodiments of the ratio between feathers and water, subject the mixture to a high-temperature and high-pressure treatment process for a fixed amount of time, resulting in a keratin solution containing at least 253 peptides, with their molecular masses between 500 and 4,000 Daltons, and the concentration is in the range of 2.0×105˜4.5×105 ppm. The solution can then be further diluted by water for application to different plants, at specific growth stages, following additional steps or processes of application to increase crops yield.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to accelerate the ripening and color change of the coffee fruits, to increase the reducing sugar content, and to decrease the chlorogenic acid content in coffee beans. By selectively choosing specific weights of feathers and water, and treating the mixture, though one embodiment does not have water mixed in, to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then applied to the leaf surface of coffee plants at different growth stages. Optionally, the KHP solution can be diluted by water, as taught in the specification, before applying to the leaf surface of the coffee plants.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to increase the grape plant's color changing (ripening) rate, flavor and sweetness. By selectively choosing specific weights of feathers and water, and treating the mixture, though one embodiment does not have water mixed in, to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then applied to the leaf surface of grape plants at different growth stages. Optionally, the KHP solution can be diluted by water, as taught in the specification, before applying to the leaf surface of the grape plants.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to increase the grape plant's production yield. By selectively choosing specific weights of feathers and water, and treating the mixture, though one embodiment does not have water mixed in, to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then applied to the leaf surface of grape plants at different growth stages. Optionally, the KHP solution can be diluted by water, as taught in the specification, before applying to the leaf surface of the grape plants.

Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure includes a contact pad over a substrate, an under-bump metallization (UBM) layer over the contact pad, a metal pillar over first UBM layer and electrically coupled to the contact pad via the UBM layer, and a solder cap on the metal pillar. The metal pillar comprises copper, and a percentage of (111) crystal orientation of the copper is 90% or more.

Abstract: A depth estimation from focus method and system includes receiving input image data containing focus information, generating an intermediate attention map by an AI model, normalizing the intermediate attention map into a depth attention map via a normalization function, and deriving expected depth values for the input image data containing focus information from the depth attention map. The AI model for depth estimation can be trained unsupervisedly without ground truth depth maps. The AI model of some embodiments is a shared network estimating a depth map and reconstructing an AiF image from a set of images with different focus positions.

Abstract: A method for regulating plant architecture includes applying a composition containing ?-Aminobutyric acid (GABA), glutamic acid and choline chloride to a plant. The composition for regulating plant architecture is also provided.

Abstract: A method for regulating plant architecture includes applying a composition containing ?-Aminobutyric acid (GABA), glutamic acid and choline chloride to a plant. The composition for regulating plant architecture is also provided.

Abstract: A depth estimation from focus method and system includes receiving input image data containing focus information, generating an intermediate attention map by an AI model, normalizing the intermediate attention map into a depth attention map via a normalization function, and deriving expected depth values for the input image data containing focus information from the depth attention map. The AI model for depth estimation can be trained unsupervisedly without ground truth depth maps. The AI model of some embodiments is a shared network estimating a depth map and reconstructing an AiF image from a set of images with different focus positions.

Abstract: The present application provides a composition of corneal implantation, comprising: a collagen film, and renal proximal tubule cells which attached to the collagen film. In addition, the present application further provides a use of the composition of corneal implantation for implanting a patient with damaged cornea endothelium cells and a preparation method of the composition of corneal implantation.

Abstract: Semiconductor devices having void-free dielectric structures and methods of fabricating same are disclosed herein. An exemplary semiconductor device includes a plurality of fin structures disposed over a substrate having isolation features disposed therein and a plurality of gate structures disposed over the plurality of fin structures. The plurality of gate structures traverse the plurality of fin structures. The semiconductor device further includes a dielectric structure defined between the plurality of fin structures and the plurality of gate structures. The dielectric structure has an aspect ratio of about 5 to about 16. The dielectric structure includes a first dielectric layer disposed over the substrate and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer and the second dielectric layer are disposed on sidewalls of the plurality of fin structures and sidewalls of the plurality of gate structures.

Abstract: A backward depth mapping method for stereoscopic image synthesis includes: providing a first coordinate and a first depth value of a pixel of a virtual view in a stereoscopic image; calculating a second coordinate and a second depth value of a pixel of reference view, which is obtained by mapping the virtual view, based on the first coordinate and the first depth value of the pixel of the virtual view; calculating an error value corresponding to the first depth value based on the second coordinate and second depth value; and determining a third depth value of the pixel of the virtual view based on the error value. As a result, it is possible to avoid the virtual view producing a crack and the pixel of the background from appearing at the crack of the foreground.

Abstract: Semiconductor devices having void-free dielectric structures and methods of fabricating same are disclosed herein. An exemplary semiconductor device includes a plurality of fin structures disposed over a substrate having isolation features disposed therein and a plurality of gate structures disposed over the plurality of fin structures. The plurality of gate structures traverse the plurality of fin structures. The semiconductor device further includes a dielectric structure defined between the plurality of fin structures and the plurality of gate structures. The dielectric structure has an aspect ratio of about 5 to about 16. The dielectric structure includes a first dielectric layer disposed over the substrate and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer and the second dielectric layer are disposed on sidewalls of the plurality of fin structures and sidewalls of the plurality of gate structures.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a substrate including a plurality of fin structures on the substrate; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first dielectric layer to form a second dielectric layer to cover the fin structures. The first solution has a first viscosity. The second solution has a second viscosity. In some embodiments, the second viscosity is greater than the first viscosity.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a flowable-material (FM) layer over a substrate. The substrate has a first region and a second region. A top surface of the FM layer in the first region is higher than a top surface of the FM layer in the second region. The method also includes forming a plurality of trenches in the FM layer in the first region and performing annealing process to reflow the FM layer, wherein the plurality of trenches are filled with the FM layer.

Abstract: A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having a second width defined along the reference plane, and the first supporting member and the second supporting member being separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region being from 5 to 30 times the second width.