Patents by Inventor Yuma FUJII

Yuma FUJII has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing apparatus and precursor gas nozzle
    Patent number: 11020760
    Abstract: A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: June 1, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Toshiki Fujino, Yuma Fujii, Kazuki Nonomura, Yoshinori Baba, Yuji Takebayashi, Kenichi Suzaki
  • SUBSTRATE PROCESSING APPARATUS AND PRECURSOR GAS NOZZLE
    Publication number: 20170232457
    Abstract: A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
    Type: Application
    Filed: February 14, 2017
    Publication date: August 17, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Toshiki FUJINO, Yuma FUJII, Kazuki NONOMURA, Yoshinori BABA, Yuji TAKEBAYASHI, Kenichi SUZAKI
  • Gas supply nozzle
    Patent number: D828091
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: September 11, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Toshiki Fujino, Yuma Fujii, Kazuki Nonomura, Yoshinori Baba, Yuji Takebayashi, Kenichi Suzaki