Patents by Inventor Yuma KATSUTA
Yuma KATSUTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11895919Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13).Type: GrantFiled: August 27, 2019Date of Patent: February 6, 2024Assignee: LINTEC CORPORATIONInventors: Masaya Todaka, Kunihisa Kato, Tsuyoshi Muto, Yuma Katsuta
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Publication number: 20240023205Abstract: A wiring sheet includes a pair of electrodes and a pseudo sheet structure including a plurality of conductive linear bodies arranged at intervals, in which the pseudo sheet structure is electrically connected to the electrodes, and the conductive linear bodies and the electrodes are fixed with contact fixing members.Type: ApplicationFiled: March 31, 2021Publication date: January 18, 2024Inventors: Takashi MORIOKA, Yuma KATSUTA, Masaharu ITO
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Publication number: 20230139564Abstract: A pseudo sheet structure is usable for a sensor configured to emit an electromagnetic wave in a band ranging from 20 GHz to 100 GHz. The pseudo sheet structure includes a plurality of conductive linear bodies arranged at an interval L satisfying a formula (1) below, 0.034×?S?L?20 mm (1). In the formula (1), L is the interval between the plurality of conductive linear bodies, ?S is a wavelength of the electromagnetic wave emitted by the sensor, and a unit for each of L and ?S is mm.Type: ApplicationFiled: March 3, 2021Publication date: May 4, 2023Inventors: Masaharu ITO, Takashi MORIOKA, Taiga MATSUSHITA, Yuma KATSUTA
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Patent number: 11581469Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.Type: GrantFiled: August 27, 2019Date of Patent: February 14, 2023Assignee: LINTEC CORPORATIONInventors: Kunihisa Kato, Tsuyoshi Muto, Masaya Todaka, Yuma Katsuta
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Patent number: 11581470Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.Type: GrantFiled: August 27, 2019Date of Patent: February 14, 2023Assignee: LINTEC CORPORATIONInventors: Wataru Morita, Kunihisa Kato, Tsuyoshi Muto, Yuma Katsuta
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Patent number: 11522114Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.Type: GrantFiled: December 7, 2017Date of Patent: December 6, 2022Assignee: LINTEC CORPORATIONInventors: Kunihisa Kato, Wataru Morita, Tsuyoshi Mutou, Yuma Katsuta, Takeshi Kondo
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Patent number: 11424397Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material.Type: GrantFiled: March 13, 2018Date of Patent: August 23, 2022Assignee: LINTEC CORPORATIONInventors: Kunihisa Kato, Wataru Morita, Tsuyoshi Muto, Yuma Katsuta
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Publication number: 20220045258Abstract: A method for producing an intermediate for thermoelectric conversion modules may avoid a supporting substrate, enabling annealing of a thermoelectric semiconductor material in a form avoiding a joint to an electrode, and enabling annealing of a thermoelectric semiconductor material at an optimum temperature. Such methods may produce an intermediate for thermoelectric conversion modules containing a P-type thermoelectric and an N-type thermoelectric element layer of a thermoelectric semiconductor composition, and include (A) forming the P-type thermoelectric element layer and the N-type thermoelectric element layer on a substrate; (B) annealing the P-type and N-type thermoelectric element layer formed in (A); (C) forming a sealant layer containing a curable resin or a cured product thereof, on the P-type and N-type thermoelectric element layer annealed in (B); and (D) peeling the P-type and the N-type thermoelectric element layer and also the sealant layer formed in (B) and (C) from the substrate.Type: ApplicationFiled: October 2, 2019Publication date: February 10, 2022Applicant: LINTEC CORPORATIONInventors: Yuta SEKI, Kunihisa KATO, Tsuyoshi MUTO, Yuma KATSUTA
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Publication number: 20210376218Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13).Type: ApplicationFiled: August 27, 2019Publication date: December 2, 2021Applicant: LINTEC CORPORATIONInventors: Masaya TODAKA, Kunihisa KATO, Tsuyoshi MUTO, Yuma KATSUTA
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Publication number: 20210328124Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.Type: ApplicationFiled: August 27, 2019Publication date: October 21, 2021Applicant: LINTEC CORPORATIONInventors: Wataru MORITA, Kunihisa KATO, Tsuyoshi MUTO, Yuma KATSUTA
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Publication number: 20210257531Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.Type: ApplicationFiled: August 27, 2019Publication date: August 19, 2021Applicant: LINTEC CORPORATIONInventors: Kunihisa KATO, Tsuyoshi MUTO, Masaya TODAKA, Yuma KATSUTA
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Publication number: 20210098672Abstract: Provided is a thermoelectric conversion module that improves the solderability between a thermoelectric element layer containing a resin and a solder layer. The thermoelectric conversion module includes a first substrate having a first electrode, a second substrate having a second electrode, a thermoelectric element layer, a solder-receiving layer that directly bonds to the thermoelectric element layer, and a solder layer, wherein the first electrode of the first substrate and the second electrode of the second substrate face each other, and wherein the thermoelectric element layer is formed of a thin film of a thermoelectric semiconductor composition containing a resin, and the solder-receiving layer contains a metal material.Type: ApplicationFiled: March 25, 2019Publication date: April 1, 2021Applicant: LINTEC CORPORATIONInventors: Kunihisa KATO, Tsuyoshi MUTO, Yuma KATSUTA
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Publication number: 20200144471Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material.Type: ApplicationFiled: March 13, 2018Publication date: May 7, 2020Applicant: LINTEC CORPORATIONInventors: Kunihisa KATO, Wataru MORITA, Tsuyoshi MUTO, Yuma KATSUTA
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Publication number: 20200066960Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.Type: ApplicationFiled: December 7, 2017Publication date: February 27, 2020Applicant: LINTEC CORPORATIONInventors: Kunihisa KATO, Wataru MORITA, Tsuyoshi MUTOU, Yuma KATSUTA, Takeshi KONDO
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Patent number: 10490724Abstract: To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.Type: GrantFiled: December 24, 2015Date of Patent: November 26, 2019Assignee: LINTEC CORPORATIONInventors: Kunihisa Kato, Tsuyoshi Mutou, Wataru Morita, Yuma Katsuta, Takeshi Kondo
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Publication number: 20170373240Abstract: To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.Type: ApplicationFiled: December 24, 2015Publication date: December 28, 2017Applicant: LINTEC CORPORATIONInventors: Kunihisa KATO, Tsuyoshi MUTOU, Wataru MORITA, Yuma KATSUTA, Takeshi KONDO