Abstract: An object of the present invention is to improve the reliability of a semiconductor device having an imaging function. A semiconductor device includes a package having a cavity and terminals (TE1), a semiconductor chip that has an imaging unit and is arranged in the cavity, and a cap material with which the cavity is sealed and which has translucency. In addition, the semiconductor device includes a mounting board that has a through-hole and terminals (TE2) and is arranged so as to electrically couple the terminals (TE1) to the terminals (TE2), a heat transfer member that is inserted into the through-hole and is coupled to the package, and a heat sink coupled to the heat transfer member.

Abstract: An object of the present invention is to improve the reliability of a semiconductor device having an imaging function. A semiconductor device includes a package having a cavity and terminals (TE1), a semiconductor chip that has an imaging unit and is arranged in the cavity, and a cap material with which the cavity is sealed and which has translucency. In addition, the semiconductor device includes a mounting board that has a through-hole and terminals (TE2) and is arranged so as to electrically couple the terminals (TE1) to the terminals (TE2), a heat transfer member that is inserted into the through-hole and is coupled to the package, and a heat sink coupled to the heat transfer member.

Abstract: It is suppressed that a whisker occurs on a lead for external connection. A lead for external connection is formed of the alloy (42Alloy) of Fe and Ni, and a plating film which includes alloy of Sn and Cu is formed on the surface. Next, using a heat-treat furnace, the heat treatment at the temperature beyond melting-point T0 of the plating film is performed, and the plating film is melted. At this time, the temperature beyond T0 is held for 20 seconds or more. The grain boundary of the plating film can be vanished by the above-mentioned heat treatment. Hereby, the internal stress of the plating film can be eased, and the generation of the whisker can be suppressed.

Abstract: It is suppressed that a whisker occurs on a lead for external connection. A lead for external connection is formed of the alloy (42Alloy) of Fe and Ni, and a plating film which includes alloy of Sn and Cu is formed on the surface. Next, using a heat-treat furnace, the heat treatment at the temperature beyond melting-point T0 of the plating film is performed, and the plating film is melted. At this time, the temperature beyond T0 is held for 20 seconds or more. The grain boundary of the plating film can be vanished by the above-mentioned heat treatment. Hereby, the internal stress of the plating film can be eased, and the generation of the whisker can be suppressed.