Abstract: Provided is a light absorption anisotropic film capable of preparing an image display device having excellent display performance and excellent durability, and a laminate and an image display device formed of the light absorption anisotropic film. The light absorption anisotropic film is used for an image display device, which is formed of a liquid crystal composition containing a liquid crystal compound and a dichroic substance, in which in a signal derived from the dichroic substance detected by time-of-flight secondary ion mass spectrometry, a relationship between a maximum intensity Imax of the light absorption anisotropic film in a thickness direction and an intensity Isur1 in a surface of the light absorption anisotropic film on a viewing side of the image display device satisfies Expression (I-1) 2.0?Imax/Isur1.

Abstract: Provided is a composition for promotion of the regeneration of the nucleus pulposus of an intervertebral disc, said composition comprising a low endotoxin monovalent metal salt of alginic acid and mesenchymal stem cells. In particular, the composition of the present invention promotes the regeneration of the nucleus pulposus of an intervertebral disc via activation of nucleus pulposus cells by human bone marrow-derived high-purity mesenchymal stem cells and/or differentiation of human bone marrow-derived high-purity mesenchymal stem cells into nucleus pulposus cells.

Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

Abstract: A thermally conductive sheet includes a resin composition including a silicone rubber, and thermally conductive fillers that are anisotropic, the thermally conductive fillers being dispersed in the silicone rubber. A content of the thermally conductive fillers in the resin composition is 52% by volume or more and 75% by volume or less. Major axes of the thermally conductive fillers are oriented in a thickness direction of the thermally conductive sheet, and a ratio of a peak intensity of a (002) plane to a peak intensity of a (100) plane in a spectrum measured from the thickness direction by an X-ray diffraction method is 0.31 or less.

Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

Abstract: A thermally conductive sheet includes a resin composition including a silicone rubber, first thermally conductive fillers that are anisotropic, the first thermally conductive fillers being dispersed in the silicone rubber, and second thermally conductive fillers that are isotropic, the second thermally conductive fillers being dispersed in the silicone rubber. A content of the first thermally conductive fillers in the resin composition is 40% by mass or more and 75% by mass or less. A content of the second thermally conductive fillers in the resin composition is 10% by mass or more and 30% by mass or less. Major axes of the first thermally conductive fillers are oriented in a thickness direction of the thermally conductive sheet.

Abstract: A thermally conductive sheet includes a resin composition including a silicone rubber, and thermally conductive fillers that are anisotropic, the thermally conductive fillers being dispersed in the silicone rubber. A content of the thermally conductive fillers in the resin composition is 52% by volume or more and 75% by volume or less. Major axes of the thermally conductive fillers are oriented in a thickness direction of the thermally conductive sheet, and a ratio of a peak intensity of a (002) plane to a peak intensity of a (100) plane in a spectrum measured from the thickness direction by an X-ray diffraction method is 0.31 or less.

Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

Abstract: A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.

Abstract: A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.

Abstract: A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer 4b consisting of a quantum well active layer on a semiconductor substrate 1; a 2nd step of forming a first dielectric film 10 on a first portion of the surface of the semiconductor layers 2 to 9; a 3rd step of forming a second dielectric film 12 made of the same material as that of the first dielectric film 10 and having a density lower than that of the first dielectric film 10 on a second portion of the surface of the semiconductor layers 2 to 9; and a 4th step of heat-treating a multilayer body containing the semiconductor layers 2 to 9, the first dielectric film 10, and the second dielectric film 12 to disorder the quantum well layer below the second dielectric film 12.

Abstract: A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer 4b consisting of a quantum well active layer on a semiconductor substrate 1; a 2nd step of forming a first dielectric film 10 on a first portion of the surface of the semiconductor layers 2 to 9; a 3rd step of forming a second dielectric film 12 made of the same material as that of the first dielectric film 10 and having a density lower than that of the first dielectric film 10 on a second portion of the surface of the semiconductor layers 2 to 9; and a 4th step of heat-treating a multilayer body containing the semiconductor layers 2 to 9, the first dielectric film 10, and the second dielectric film 12 to disorder the quantum well layer below the second dielectric film 12.

Abstract: A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer 4b consisting of a quantum well active layer on a semiconductor substrate 1; a 2nd step of forming a first dielectric film 10 on a first portion of the surface of the semiconductor layers 2 to 9; a 3rd step of forming a second dielectric film 12 made of the same material as that of the first dielectric film 10 and having a density lower than that of the first dielectric film 10 on a second portion of the surface of the semiconductor layers 2 to 9; and a 4th step of heat-treating a multilayer body containing the semiconductor layers 2 to 9, the first dielectric film 10, and the second dielectric film 12 to disorder the quantum well layer below the second dielectric film 12.

Abstract: A method of fabricating a semiconductor device having high output power and excellent long-term reliability by preventing thermal adverse influence exerted at the time of window structure formation is provided. The method comprises a 1st step of forming predetermined semiconductor layers 2 to 9 containing at least an active layer 4b consisting of a quantum well active layer on a semiconductor substrate 1; a 2nd step of forming a first dielectric film 10 on a first portion of the surface of the semiconductor layers 2 to 9; a 3rd step of forming a second dielectric film 12 made of the same material as that of the first dielectric film 10 and having a density lower than that of the first dielectric film 10 on a second portion of the surface of the semiconductor layers 2 to 9; and a 4th step of heat-treating a multilayer body containing the semiconductor layers 2 to 9, the first dielectric film 10, and the second dielectric film 12 to disorder the quantum well layer below the second dielectric film 12.

Abstract: A protective film is formed on a surface of a semiconductor device corresponding to at least a portion that is not to be disordered, by arranging a heat source on a path through which a precursor of the protective film to be formed passes, to cause a decomposition reaction of the precursor in the presence of the heat source, and by exposing the surface of the semiconductor device to the atmosphere after the decomposition reaction. A portion to be disordered is disordered using a thermal treatment.

Abstract: A toy giving off sound includes a body having a size which can be clasped in a hand, a turntable provided on the body to be rotated by a tip of a finger, and a sound generating member for generating a sound accompanied with an operation of rotating the turntable. The toy can be used for various ways of play to generate a sound.

Abstract: Disclosed is a flash memory writing method associated with a computer system constituted by a main apparatus and an external apparatus detachable from the main apparatus, in which, when information stored in a memory inside the external memory is written in a flash memory inside the main apparatus, it is always directly copied regardless of the capacity of the flash memory. More specifically, the memory contents of the flash memory can be erased in units of blocks. The memory in the external apparatus is also divided into blocks, one of which stores an IPL and a flash memory rewrite program. A selector switches assignment of the address space of a CPU in response to a selector operation select signal. When the external apparatus is connected to the main apparatus including the CPU, the address space for starting the IPL is assigned to the block of the memory inside the external apparatus which stores the IPL. After the IPL starts, the flash memory rewrite program takes control.

Abstract: Plural auxiliaries are independently driven by a belt ot suppress an increase in the number of parts and simplify the structure. A cam shaft has first and second driving pulleys disposed in parallel to each other. A first auxiliary having a smaller load against the engine is movably mounted to the engine and it has a first following pulley mounted to its operating shaft which is coaxially and rotatably mounted with an idle pulley. On the other hand, a second auxiliary having a larger load against the engine is fixed to the engine. To the engine is movably mounted a tension pulley. A first belt for driving the first auxiliary is wound around the first following pulley, the first driving pulley and a tension pulley, while a second belt for driving the second auxiliary is wound around the second driving pulley and the idle pulley. The tension of the first belt is adjusted by transferring the tension pulley, while the tension of the second belt is adjusted by transferring the first auxiliary.