Patents by Inventor Yumie KITAJIMA

Yumie KITAJIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220003808
    Abstract: Provided is a technique for enhancing the accuracy of deterioration diagnosis in a semiconductor device. The semiconductor device relating to the technique disclosed in the present specification is provided with a case, a semiconductor chip inside the case, a metal wire bonded to an upper surface of the semiconductor chip, at least one test piece inside the case, and a pair of terminals provided outside the case and connected to the test piece. The test piece is separated from the metal wire inside the case.
    Type: Application
    Filed: March 1, 2019
    Publication date: January 6, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventor: Yumie KITAJIMA
  • Patent number: 10672739
    Abstract: A first member of a first semiconductor module and a second member of a second semiconductor module are disposed adjacent to each other along a crossing line segment crossing a longitudinal direction of the first semiconductor module as seen in a plan view. The first member is provided with a first circuit. The second member is provided with a second circuit. The first circuit does not drive when the second circuit is driving. The second circuit does not drive when the first circuit is driving.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: June 2, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yumie Kitajima, Shota Saito
  • Patent number: 10522482
    Abstract: An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: December 31, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yumie Kitajima, Tatunori Yanagimoto, Kiyoshi Arai
  • Publication number: 20190139906
    Abstract: An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.
    Type: Application
    Filed: December 31, 2018
    Publication date: May 9, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yumie KITAJIMA, Tatunori YANAGIMOTO, Kiyoshi ARAI
  • Publication number: 20190109116
    Abstract: A first member of a first semiconductor module and a second member of a second semiconductor module are disposed adjacent to each other along a crossing line segment crossing a longitudinal direction of the first semiconductor module as seen in a plan view. The first member is provided with a first circuit. The second member is provided with a second circuit. The first circuit does not drive when the second circuit is driving. The second circuit does not drive when the first circuit is driving.
    Type: Application
    Filed: May 2, 2016
    Publication date: April 11, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yumie KITAJIMA, Shota SAITO
  • Publication number: 20170207179
    Abstract: An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.
    Type: Application
    Filed: August 28, 2014
    Publication date: July 20, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yumie KITAJIMA, Tatunori YANAGIMOTO, Kiyoshi ARAI