Patents by Inventor Yu-Min Jung

Yu-Min Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for processing distortion of fingerprint image
    Patent number: 11093776
    Abstract: The present invention relates to a method and an apparatus for processing a distortion of a fingerprint image.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: August 17, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-Min Jung, Hae-Dong Lee, Seong-Sig Kang, Kyu-Hong Kim, Hee-Kuk Lee, Tushar Balasaheb Sandhan
  • METHOD AND APPARATUS FOR PROCESSING DISTORTION OF FINGERPRINT IMAGE
    Publication number: 20190340455
    Abstract: The present invention relates to a method and an apparatus for processing a distortion of a fingerprint image.
    Type: Application
    Filed: January 4, 2018
    Publication date: November 7, 2019
    Inventors: Yu-Min JUNG, Hae-Dong LEE, Seong-Sig KANG, Kyu-Hong KIM, Hee-Kuk LEE, Tushar Balasaheb SANDHAN
  • Method of depositing chalcogenide film for phase-change memory
    Patent number: 7803656
    Abstract: Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: September 28, 2010
    Assignee: IPS Ltd.
    Inventors: Yu-Min Jung, Ki-Hoon Lee
  • CLEANING METHOD OF APPARATUS FOR DEPOSITING METAL CONTAINING FILM
    Publication number: 20090090384
    Abstract: Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.
    Type: Application
    Filed: January 22, 2007
    Publication date: April 9, 2009
    Inventors: Dong-Ho You, Ki-Hoon Lee, Yu-Min Jung
  • METHOD OF DEPOSITING CHALCOGENIDE FILM FOR PHASE-CHANGE MEMORY
    Publication number: 20090093083
    Abstract: Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.
    Type: Application
    Filed: May 18, 2007
    Publication date: April 9, 2009
    Inventors: Yu-Min Jung, Ki-Hoon Lee