Abstract: A power module, including: a chip, a package baseplate, a ceramic baseplate, and a plastic package body. The chip is disposed on the ceramic baseplate, the package baseplate is disposed on a surface that is of the ceramic baseplate and that is away from the chip, and an area of the package baseplate is greater than an area of the ceramic baseplate. The package baseplate includes at least one protrusion structure which is located on a surface that is of the package baseplate and that is close to the ceramic baseplate, and projection of the at least one protrusion structure does not overlap projection of the ceramic baseplate in a thickness direction of the chip. The chip, the ceramic baseplate, and the surface that is of the package baseplate and on which the at least one protrusion structure is disposed are disposed in the plastic package body.

Abstract: A hybrid bond sheet for bonding a first joining member to a second joining member, including: a core layer including: a core insulating layer formed between an upper main face and a lower main face of the core layer; and one or more metallic through-connections penetrating the core insulating layer from the upper main face to the lower main face. The hybrid bond sheet includes a first bonding layer with a first insulating bond layer and a first metal bond layer for bonding the first joining member. The hybrid bond sheet includes a second bonding layer with a second insulating bond layer and a second metal bond layer for bonding the second joining member. The one or more metallic through-connections and the first and second metal bond layers are configured to form an electrically and thermally conductive connection with the first joining member and the second joining member.

Abstract: A hybrid bond sheet for mounting a semiconductor power module to a heat sink includes a thermally conductive core layer having an upper main face and a lower main face; a first bond layer formed at the upper main face of the core layer for bonding the hybrid bond sheet to a semiconductor power module; and a second bond layer formed at the lower main face of the core layer for bonding the hybrid bond sheet to a heat sink; where the core layer is subdivided into a plurality of core metal sections and core polymer sections which are formed side-by-side between the upper main face and the lower main face, the subdivided core metal sections being configured to enable a uniform heat transfer between the semiconductor power module and the heat sink and to reduce thermal stress at interfaces between the hybrid bond sheet and the heat sink.

Abstract: A method of conditioning MoCl5 comprises heating a container of MoCl5 to a temperature ranging from approximately 140° C. to 190° C. for a period ranging from approximately 2 hours to approximately 100 hours to produce a MoCl5-containing composition comprising approximately 10% weight to approximately 60% weight of Phase 1 MoCl5 and 90% weight to approximately 40% weight of Phase 2 MoCl5 as determined by X-ray diffraction. This MoCl5-containing composition is expected to be more thermally stable and provides stable vapor supply.

Abstract: A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula: (NR8R9)(NR1R2)Ga[(R3R4N)Cx(R5R6)(NR7)]??(I) (Cy-N)2Ga[(R3R4N)Cx(R5R6)(NR7)]??(II) wherein, R1 to R9 are independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; R1 to R9 may be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

Abstract: The present invention relates to the technical field of sunshading articles, and particularly discloses a multifunctional umbrella tent, comprising an umbrella surface, umbrella ribs, an umbrella disc assembly, an umbrella rod and ear pieces. The umbrella ribs support the umbrella surface, the umbrella disc assembly is hinged in the middle of the umbrella ribs, and the umbrella rod is connected to the lower end of the umbrella disc assembly; the ear pieces are triangular and detachably connected to both sides of the umbrella surface in an expanded state; the umbrella ribs are evenly arranged on the lower end of the umbrella surface peripherally, and comprise a plurality of long ribs and a plurality of short ribs; and the umbrella disc assembly comprises an umbrella cap, an upper disc, a lower disc and an outer lock of the lower disc.

Abstract: A refrigerator includes a refrigerator body, an ice maker, a refrigeration cycle system, and a controller. The refrigerator body includes a chamber. The ice maker is located in the chamber and is configured to make ice. The ice maker includes two refrigerant pipes. The refrigeration cycle system includes a compressor, a condenser, and two cooling flow paths. The two cooling flow paths are connected to the two refrigerant pipes, respectively, and the two cooling flow paths are configured to cool the ice maker. The controller is configured to control the compressor to be turned on or off and control the two cooling flow paths to open or be closed, so as to cool the ice maker through at least one of the two refrigerant pipes.

Abstract: The present invention provides an interpretable power load prediction method, system and terminal machine, relating to the field of power load prediction. The method comprises: initializing three factors—seasonal factor, trend factor, and smoothing factor, denoted as S1, T1, and I1 respectively; calculating states of the three factors for time t+1 in a current DeepES unit; outputting the three factors St+1, Tt+1, and It+1 to a next DeepES unit; repeating until a n-th DeepES unit completes its operation; calculating a predicted value Y based on the three factors that are outputted from a final DeepES unit. In power load prediction, constructing an interpretable prediction model enables users to understand the inference process of the model, therefore helps enhance the credibility of the model.

Abstract: The present invention discloses a soil-structure improving bio-organic fertilizer and a preparation method thereof, and belongs to the technical field of biological fertilizers. The preparation method of the bio-organic fertilizer of the present invention includes the following steps: S1: aerobically fermenting cow dung-based organic materials to prepare a solid-state fermentation medium; S2: inoculating Bacillus subtilis fermentation broth and silicate bacteria fermentation broth into the solid-state fermentation medium for solid-state fermentation until the end of fermentation; and S3: after the fermentation is finished, extruding and granulating or directly sieving to prepare the soil-structure improving bio-organic fertilizer.

Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: Disclosed are vapor delivery systems comprise a housing body defining an interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidically connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.

Abstract: An electrocardiogram detection device (000) whose housing (10) may be made of a conductive material, and the electrocardiogram detection device (000) may include a voltage holder circuit (30) configured to provide a target potential for the housing (10). A potential difference between the target potential provided by the voltage holder circuit (30) and a reference potential provided by an electrocardiogram detection circuit (20) for a third electrode (P3) is small. Therefore, in an ECG detection process, even if a user accidentally touches the housing (10) and causes the housing (10) to be conducted to the third electrode (P3), no leakage current is generated between the housing (10) and the third electrode (P3), or a small leakage current is generated between the housing (10) and the third electrode (P3). This can effectively reduce interference to an ECG signal and ensure accuracy of ECG detection.

Abstract: A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

Abstract: A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Abstract: Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Abstract: Disclosed are vapor delivery systems comprise a housing body defining an interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidically connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.

Abstract: A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.