Abstract: A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.

Abstract: A method for synthesizing a graphene pattern is provided. According to the method, a catalyst block including a catalyst material is physically adhered to a portion of a growth substrate to form an interface between the catalyst block and the growth substrate. A graphene thin film is formed selectively at the interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor.

Abstract: A method for forming a hexagonal boron nitride (h-BN) thin film is provided. According to the method, an alumina thin film including amorphous alumina or gamma-alumina is prepared. An h-BN thin film is synthesized at equal to or less than 750° C. on the alumina thin film. A mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.

Abstract: A method for forming a hexagonal boron nitride (h-BN) thin film is provided. According to the method, an alumina thin film including amorphous alumina or gamma-alumina is prepared. An h-BN thin film is synthesized at equal to or less than 750° C. on the alumina thin film. A mono-layer thickness of the h-BN film is equal to or less than 0.40 nm.