Abstract: FCVD using multi-step anneal treatment and devices thereof are disclosed. In an embodiment, a method includes depositing a flowable dielectric film on a substrate. The flowable dielectric film is deposited between a first semiconductor fin and a second semiconductor fin. The method further includes annealing the flowable dielectric film at a first anneal temperature for at least 5 hours to form a first dielectric film, annealing the first dielectric film at a second anneal temperature higher than the first anneal temperature to form a second dielectric film, annealing the second dielectric film at a third anneal temperature higher than the first anneal temperature to form an insulating layer, applying a planarization process to the insulating layer, and etching the insulating layer to STI regions on the substrate.

Abstract: Continuous polysilicon on oxide diffusion edge (CPODE) processes are described herein in which one or more semiconductor device parameters are tuned to reduce the likelihood of etching of source/drain regions on opposing sides of CPODE structures formed in a semiconductor device, to reduce the likelihood of depth loading in the semiconductor device, and/or to reduce the likelihood of gate deformation in the semiconductor device, among other examples. Thus, the CPODE processes described herein may reduce the likelihood of epitaxial damage to the source/drain regions, may reduce current leakage between the source/drain regions, and/or may reduce the likelihood of threshold voltage shifting for transistors of the semiconductor device. The reduced likelihood of threshold voltage shifting may provide more uniform and/or faster switching speeds for the transistors, more uniform and/or lower power consumption for the transistors, and/or increased device performance for the transistors, among other examples.

Abstract: A method of forming a semiconductor device includes loading a first wafer and a second wafer into a wafer bonding system. A relative humidity within the wafer bonding system is measured a first time. After measuring the relative humidity, the relative humidity within the wafer bonding system may be adjusted to be within a desired range. When the relative humidity is within the desired range, the first wafer is bonded to the second wafer.

Abstract: Methods for fabricating semiconductor devices are provided. An exemplary method includes forming fins in a dense region and in an isolated region of a semiconductor substrate; performing a plasma dry etch process to remove a portion of at least one selected fin to form a first trench in the dense region and to remove a portion of at least one selected fin in the isolated region to form a second trench in the isolated region, wherein the plasma dry etch process includes: performing a passivation-oriented process and an etchant-oriented process; and controlling the passivation-oriented process and the etchant-oriented process to form the first trench with a desired first critical dimension and first depth and to form the second trench with a desired second critical dimension and second depth.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: A remote rendering system based on a virtual mobile architecture, including a client and a server is provided. The client includes a central processing unit (CPU) for executing a remote rendering service receiver (RRS receiver) and applications, a graphics processing unit (GPU), and a display. The server is configured to execute a QEMU pipe and a remote rendering service sender (RRS sender). OpenGL commands are transmitted to the RRS sender through the QEMU pipe, and the RRS sender transmits the OpenGL commands to the client. The CPU executes the RRS receiver to receive the OpenGL commands. After a connection between the RRS receiver and the applications is established, the GPU draws a screen corresponding to the applications according to the OpenGL commands, and displays the screen through the monitor.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: The disclosure provides a method and system for implementing inter-process communications. The method includes sending, by a first application, a first message to a forwarding application according to a first preset inter-process communication mode. The first message includes transmission data and identification information of a second application; obtaining, by the forwarding application, the second application in response to the first message; and sending, by the forwarding application, the transmission data to the second application according to a second preset inter-process communication mode of the second application.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: An illumination device includes a reflection disk, a positioning frame, a solar cell module, an illumination member and a driving device. The positioning frame is located at the focus of the curved reflection surface of the reflection disk. The solar cell module and the illumination member are respectively connected to the front and back of the positioning frame. The driving device is used to drive the positioning frame to rotate relative to the reflection disk. When the solar cell faces the curved reflection surface, the solar cell absorbs the reflected sun light to generate electric power. When the illumination member faces the curved reflection surface, light emitted from the illumination member is reflected by the curved reflection surface.

Abstract: An illumination device includes a reflection disk, a positioning frame, a solar cell module, an illumination member and a driving device. The positioning frame is located at the focus of the curved reflection surface of the reflection disk. The solar cell module and the illumination member are respectively connected to the front and back of the positioning frame. The driving device is used to drive the positioning frame to rotate relative to the reflection disk. When the solar cell faces the curved reflection surface, the solar cell absorbs the reflected sun light to generate electric power. When the illumination member faces the curved reflection surface, light emitted from the illumination member is reflected by the curved reflection surface.