Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: An integrated circuit apparatus and a power distribution network thereof are provided. The power distribution network includes a top wiring layer, a bottom wiring layer, and a first conductive path. The top wiring layer includes a first top trace and a second top trace extending along a first direction. The bottom wiring layer includes a first bottom trace extending along a second direction. The first bottom trace has an electric potential equal to that of the first top trace, but different from that of the second top trace. The first conductive path connected between the first top and bottom traces includes a first upper conductive structure and a first lower conductive structure that are located directly under the first top trace and the second top trace, respectively. A signal wire preselected region is defined between the first upper conductive structure and the first bottom trace.

Abstract: An integrated circuit apparatus and a power distribution network thereof are provided. The power distribution network includes a top wiring layer, a bottom wiring layer, and a first conductive path. The top wiring layer includes a first top trace and a second top trace extending along a first direction. The bottom wiring layer includes a first bottom trace extending along a second direction. The first bottom trace has an electric potential equal to that of the first top trace, but different from that of the second top trace. The first conductive path connected between the first top and bottom traces includes a first upper conductive structure and a first lower conductive structure that are located directly under the first top trace and the second top trace, respectively. A signal wire preselected region is defined between the first upper conductive structure and the first bottom trace.

Abstract: The application discloses a semiconductor device and a semiconductor device manufacturing method. The semiconductor device includes: a substrate; a circuit macro on the substrate; a plurality of metal layers over the substrate, wherein the plurality of metal layers include a first power mesh; and a plurality of power switch circuits on the substrate, wherein the power switch circuits selectively couple a power to the first power mesh according to a control signal, and the power switch circuits are arranged in sequence, wherein a control signal output terminal of each first power switch circuit is coupled to a control signal input terminal of a following first power switch circuit, so that the control signal passes through the first power switch circuits sequentially.

Abstract: A method for compensating voltage drop with additional power mesh and a circuit system thereof are provided. In the method, circuit layout of the system is segmented into one or more regions. A layout overflow analysis is performed on each of the regions. A routing overflow rate for each region is calculated according to a ratio of an area occupied by signal tracks and power tracks of a power mesh to another area provided for whole route tracks in the same region. After considering a ranking of the routing overflow rates of the regions, the widths of metal wires, a predetermined ratio of IR drop compensation for the circuit system, and a degree of electron migration to be improved, the additional power tracks of the power mesh deployed to the circuit system are decided. The additional power tracks of the power mesh can effectively improve the IR drop.

Abstract: A method for performing power mesh optimization with the aid of additional wires and an associated apparatus are provided. The method includes: reading a clock cell definition file to obtain respective basic information of a plurality of clock cells in a circuit design; and according to the respective basic information of the plurality of clock cells, executing a power mesh optimization procedure, including: regarding any type of clock cells in multiple types of clock cells within the plurality of clock cells, classifying the clock cells into a plurality of sub-types according to respective sizes of the type of clock cells; and performing power mesh enhancement on respective clock cells of a set of sub-types within the plurality of sub-types, to add a set of additional wires crossing a set of original wires in an original power mesh at each clock cell of any sub-type of the set of sub-types.

Abstract: A method for performing power mesh optimization with the aid of additional wires and an associated apparatus are provided. The method includes: reading a clock cell definition file to obtain respective basic information of a plurality of clock cells in a circuit design; and according to the respective basic information of the plurality of clock cells, executing a power mesh optimization procedure, including: regarding any type of clock cells in multiple types of clock cells within the plurality of clock cells, classifying the clock cells into a plurality of sub-types according to respective sizes of the type of clock cells; and performing power mesh enhancement on respective clock cells of a set of sub-types within the plurality of sub-types, to add a set of additional wires crossing a set of original wires in an original power mesh at each clock cell of any sub-type of the set of sub-types.

Abstract: Disclosed is an integrated circuit (IC) layout method capable of reducing an IR drop as a result of an IC layout process. The method includes the following steps: performing the IC layout process and obtaining an original IC layout; performing an IR drop analysis on the original IC layout and identifying an IR drop hot zone; determining a circuit density limit of the IR drop hot zone; and performing the IC layout process again according to the circuit density limit and obtaining an updated IC layout.

Abstract: An IC design method is provided that includes steps outlined below. A clock tree structure is retrieved from an IC design file. A branch level number of a branch that each of clock units in the clock tree structure locates is determined. A common branch level number of a common branch that closest to each two of the flip-flops is determined. A scan chain structure is retrieved from the IC design file. A wire distance and a clock skew of each two of the flip-flops are determined. A cost is calculated according to the common branch number, the wire distance and the clock skew. An initial point and a terminal point of the flip-flops in the scan chain structure are determined to further calculate a path having a minimum cost. The order of the scan chain structure of the IC design file is updated.

Abstract: A planning method for power metal lines is provided. The planning method includes selecting a block to plan, the block including a first metal layer and a second metal layer therebelow. The first metal layer includes a plurality of first metal lines along a first direction and the second metal layer includes a plurality of second metal lines along a second direction. The block includes a length in the first direction and a width in the second direction. According to a ratio of the length and the width of the block, a line width adjustment procedure is performed to adjust a first line width of each of the first metal lines and a second line width of each of the second metal lines, so that routing congestion can be avoided without affecting the IR drop.

Abstract: Disclosed is an integrated circuit (IC) layout method capable of reducing an IR drop as a result of an IC layout process. The method includes the following steps: performing the IC layout process and obtaining an original IC layout; performing an IR drop analysis on the original IC layout and identifying an IR drop hot zone; determining a circuit density limit of the IR drop hot zone; and performing the IC layout process again according to the circuit density limit and obtaining an updated IC layout.

Abstract: A planning method for power metal lines is provided. The planning method includes selecting a block to plan, the block including a first metal layer and a second metal layer therebelow. The first metal layer includes a plurality of first metal lines along a first direction and the second metal layer includes a plurality of second metal lines along a second direction. The block includes a length in the first direction and a width in the second direction. According to a ratio of the length and the width of the block, a line width adjustment procedure is performed to adjust a first line width of each of the first metal lines and a second line width of each of the second metal lines, so that routing congestion can be avoided without affecting the IR drop.

Abstract: An IC design method is provided that includes steps outlined below. A clock tree structure is retrieved from an IC design file. A branch level number of a branch that each of clock units in the clock tree structure locates is determined. A common branch level number of a common branch that closest to each two of the flip-flops is determined. A scan chain structure is retrieved from the IC design file. A wire distance and a clock skew of each two of the flip-flops are determined. A cost is calculated according to the common branch number, the wire distance and the clock skew. An initial point and a terminal point of the flip-flops in the scan chain structure are determined to further calculate a path having a minimum cost. The order of the scan chain structure of the IC design file is updated.

Abstract: A method of using a simulation software to generate a circuit layout, the method comprising: (A) determining a plurality of blocks on a circuit board, wherein each block of the plurality of blocks includes an operating space and a reserved space; (B) determining a size of the reserved space of each block of the plurality of blocks according to at least one specific condition;(C) determining whether to adjust the size of the reserved space of each block of the plurality of blocks according to at least one determining condition; and (D) when it is determined not to adjust the size of the reserved space in step (C), generating the circuit layout according to the size of the reserved space of each block of the plurality of blocks determined in step (B).

Abstract: A method of using simulation software to generate circuit layout includes: (A) determining a plurality of blocks on a circuit board, wherein each block includes an operating space and a reserved space; (B) determining a size of the reserved space of each of the blocks according to at least one specific condition; (C) determining whether to adjust the size of the reserved space of the blocks according to at least one determining condition; and (D) when it is determined not to adjust the size of the reserved space in step (C), generating the circuit layout according to the size of the reserved space of the blocks determined in step (B).

Abstract: A circuit structure is electrically connected to a power source. The circuit structure includes a first circuit module and a second circuit module. The first circuit module includes a first module power switch and a plurality of circuits. The first module power switch is electrically connected to the power source. The first circuit module has a first module current. The second circuit module includes a second module power switch and a plurality of circuits. The second power switch is electrically connected to the power source. The second circuit module has a second module current. A turn-on order of the first module power switch and the second power switch is determined based on the first module current and the second module current.

Abstract: A circuit structure is electrically connected to a power source. The circuit structure includes a first circuit module and a second circuit module. The first circuit module includes a first module power switch and a plurality of circuits. The first module power switch is electrically connected to the power source. The first circuit module has a first module current. The second circuit module includes a second module power switch and a plurality of circuits. The second power switch is electrically connected to the power source. The second circuit module has a second module current. A turn-on order of the first module power switch and the second power switch is determined based on the first module current and the second module current.

Abstract: The invention discloses a clock tree synthesis method including steps of: determining a driving strength of a clock cell; determining a reserved space corresponding to the clock cell according to the driving strength; generating the clock cell and the reserved space, wherein the reserved space is adjacent to the clock cell; setting a decoupling capacitor filler cell in the reserved space, wherein the area and/or capacitance of the decoupling capacitor filler cell are/is associated with the driving strength; and fixing the attribute(s) of the clock cell and the attribute(s) of the decoupling capacitor filler cell.

Abstract: The invention discloses a clock tree synthesis method including steps of: determining a driving strength of a clock cell; determining a reserved space corresponding to the clock cell according to the driving strength; generating the clock cell and the reserved space, wherein the reserved space is adjacent to the clock cell; setting a decoupling capacitor filler cell in the reserved space, wherein the area and/or capacitance of the decoupling capacitor filler cell are/is associated with the driving strength; and fixing the attribute(s) of the clock cell and the attribute(s) of the decoupling capacitor filler cell.

Abstract: A pencil box made in the shape of a mobile telephone, comprising an upper shell separated from a bottom shell by a transverse partition board, a big sliding box at one side below said partition board for holding pencils, two small sliding boxes at one end above said partition board, a small sliding box and a sliding pencil holder at an opposite end above said partition board, a movable pencil sharpener in said upper shell at the top, a music IC on said partition board controlled to produce sounds by music playing keys on said upper shell, a brake control assembly on said partition board to retain said sliding boxes and said sliding pencil holder and said pencil sharpener in place, spring means controlled by control keys on said upper shell to automatically respectively push said sliding boxes, said sliding pencil holder and said pencil sharpener out of said upper or bottom shell.