Patents by Inventor Yun-Chul Shin

Yun-Chul Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming a structured tungsten layer and forming a semiconductor device using the same
    Patent number: 7390743
    Abstract: A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A second tungsten layer is formed on the first tungsten layer with a chemical vapor deposition (CVD) method. A third tungsten layer is formed on the second tungsten layer with the ALD method to complete the structured tungsten layer.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: June 24, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yun-Chul Shin
  • Methods for forming a structured tungsten layer and forming a semiconductor device using the same
    Publication number: 20060110921
    Abstract: A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A second tungsten layer is formed on the first tungsten layer with a chemical vapor deposition (CVD) method. A third tungsten layer is formed on the second tungsten layer with the ALD method to complete the structured tungsten layer.
    Type: Application
    Filed: November 21, 2005
    Publication date: May 25, 2006
    Inventor: Yun-Chul Shin