Patents by Inventor Yun-Chung CHOU

Yun-Chung CHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12230736
    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: February 18, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Jian-Zhi Chen, Yen-Chun Tseng, Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou
  • Publication number: 20220173292
    Abstract: The present disclosure provides a semiconductor device.
    Type: Application
    Filed: November 29, 2021
    Publication date: June 2, 2022
    Inventors: Ching-Hsing SHEN, Wen-Luh LIAO, Chen OU, Shih-Chang LEE, Hui-Fang KAO, Yun-Chung CHOU
  • Publication number: 20210305456
    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.
    Type: Application
    Filed: March 24, 2021
    Publication date: September 30, 2021
    Inventors: Jian-Zhi CHEN, Yen-Chun TSENG, Hui-Fang KAO, Yao-Ning CHAN, Yi-Tang LAI, Yun-Chung CHOU, Shih-Chang LEE, Chen OU
  • Patent number: D972769
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: December 13, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou
  • Patent number: D1062026
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: February 11, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou